ASI10830 Advanced Semiconductor, ASI10830 Datasheet

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ASI10830

Manufacturer Part Number
ASI10830
Description
VHF POWER MOSFET N-Channel Enhancement Mode
Manufacturer
Advanced Semiconductor
Datasheet
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200
CHARACTERISTICS
DESCRIPTION:
The
wideband large-signal output and
driver stages in the 2.0-200 MHz
frequency range.
FEATURES:
MAXIMUM RATINGS
P
V
SYMBOL
T
P
30:1 Load VSWR Capability
Omnigold™ Metalization System
V
T
DISS
I
STG
DSS
G
GS
JC
D
BV
V
J
C
ASI MRF172
I
C
I
C
= 10 dB Min. at 150 MHz
GS(th)
g
P
DSS
GSS
oss
rss
iss
fs
DSS
G
D
220 W @ T
-65 °C to +200 °C
-65 °C to +150 °C
I
V
V
I
I
V
V
V
DS
D
D
DS
DS
DS
DD
SWR
= 50 mA
= 2.5 A
= 50 mA
= 28 V
0.8 °C/W
= 28 V
= 0 V
= 28 V
is Designed for
= 30:1
9.0 A
65 V
40 V
C
T
N-Channel Enhancement Mode
C
= 25 °C
AT ALL PHASE ANGLES
= 25 °C
TEST CONDITIONS
V
V
V
V
V
I
GS
GS
DS
DS
GS
DQ
VHF POWER MOSFET
= 0 V
= 20 V
= 10 V
= 10 V
= 0 V
= 50 mA
Specifications are subject to change without notice.
f = 150 MHz
f = 1.0 MHz
P
out
= 80 W
PACKAGE STYLE .380 4L FLG
DIM
A
B
C
D
E
F
G
H
J
I
ORDER CODE: ASI10830
MINIMUM
FAX (818) 765-3004
F
1.0
1.5
.785 / 19.94
.720 / 18.29
.970 / 24.64
65
10
50
.220 / 5.59
.004 / 0.10
.085 / 2.16
.160 / 4.06
.240 / 6.10
MINIMUM
inches / mm
NO DEGRADATION IN OUTPUT POWER
B
.112 x 45°
S
G
D
TYPICAL MAXIMUM
C
E
200
110
D
S
20
NONE
A
.730 / 18.54
.980 / 24.89
MAXIMUM
.230 / 5.84
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
G
inches / mm
.125
Ø.125 NOM.
H
FULL R
I
J
5.0
1.0
5.0
MRF172
UNITS
REV. A
mho
mA
dB
pF
1/1
%
V
V
A

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