MRF6S9045 Freescale Semiconductor, MRF6S9045 Datasheet
MRF6S9045
Manufacturer Part Number
MRF6S9045
Description
RF Power Field Effect Transistors
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF6S9045.pdf
(16 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF6S9045MR1
Manufacturer:
MURATA
Quantity:
120 000
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
GSM EDGE Application
• Typical GSM EDGE Performance: V
GSM Application
• Typical GSM Performance: V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
Table 1. Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Designed for broadband commercial and industrial applications with
I
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
P
Full Frequency Band (921 - 960 MHz)
Output Power
13 inch Reel.
13 inch Reel.
DQ
Derate above 25°C
out
Power Gain — 20 dB
Drain Efficiency — 68%
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Power Gain — 22.7 dB
Drain Efficiency — 32%
ACPR @ 750 kHz Offset — - 47 dBc @ 30 kHz Bandwidth
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
= 350 mA, P
= 16 Watts Avg., Full Frequency Band (921 - 960 MHz)
out
= 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
C
= 25°C
DD
= 28 Volts, I
Rating
DD
= 28 Volts, I
DQ
= 350 mA, P
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
DQ
= 350 mA,
out
DD
= 45 Watts,
= 28 Volts,
Symbol
V
V
T
P
DSS
T
GS
stg
D
J
BROADBAND RF POWER MOSFETs
Document Number: MRF6S9045
MRF6S9045MBR1
MRF6S9045NBR1
MRF6S9045MR1
MRF6S9045NR1
880 MHz, 10 W AVG., 28 V
LATERAL N - CHANNEL
CASE 1265- 08, STYLE 1
MRF6S9045NR1(MR1)
MRF6S9045NBR1(MBR1)
CASE 1337 - 03, STYLE 1
SINGLE N - CDMA
- 65 to +150
- 0.5, +68
- 0.5, + 12
TO - 270 - 2
Value
PLASTIC
175
200
TO - 272 - 2
1.0
PLASTIC
Rev. 1, 6/2005
W/°C
Unit
Vdc
Vdc
°C
°C
W
1