MRF6S9045 Freescale Semiconductor, MRF6S9045 Datasheet - Page 7

• Manufacturer Part Number: MRF6S9045
• Description: RF Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
−80
1
Figure 7. Intermodulation Distortion Products
V
f2 = 880.1 MHz, Two −Tone Measurements
Center Frequency = 880 MHz
5th Order
DD
3rd Order
7th Order
= 28 Vdc, I
P
out
DQ
versus Output Power
, OUTPUT POWER (WATTS) PEP
= 350 mA, f1 = 880 MHz
10
60
50
40
30
20
10
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
0
1
54
53
52
51
50
49
48
47
46
45
44
V
f = 880 MHz, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8
Through 13
Gain and Drain Efficiency versus Output Power
ALT1
G
23
DD
ps
= 28 Vdc, I
P1dB = 48.2 dBm (66.07 W)
T
Figure 9. Pulse CW Output Power versus
24
C
= 25_C
TYPICAL CHARACTERISTICS
P
out
P3dB = 48.6 dBm (72.44 W)
25
DQ
, OUTPUT POWER (WATTS) AVG.
= 350 mA
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
26
P
ACPR
in
, INPUT POWER (dBm)
100
25_C
Input Power
27
V
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 880 MHz
DD
28
10
= 28 Vdc, I
−10
−20
−30
−40
−50
−60
−70
29
85_C
0
85_C
0.05
Figure 8. Intermodulation Distortion Products
DQ
30
V
f1 = 880 MHz, f2 = 880.1 MHz, Two −Tone Measurements
Center Frequency = 880 MHz
DD
−30_C
3rd Order
5th Order
= 350 mA
7th Order
0.1
η
= 28 Vdc, P
D
31
−30_C
25_C
25_C
Actual
32
Ideal
50
out
versus Tone Spacing
TWO −TONE SPACING (MHz)
−25
−35
−45
−55
−65
−75
−85
= 45 W (PEP), I
33
1
DQ
= 350 mA
10
100
7