K1342 Hitachi Semiconductor, K1342 Datasheet

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K1342

Manufacturer Part Number
K1342
Description
Search -----> 2SK1342
Manufacturer
Hitachi Semiconductor
Datasheet
www.DataSheet4U.com
Application
High speed power switching
Features
Outline
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Silicon N-Channel MOS FET
TO-3P
G
2SK1342
S
D
1
2
3
1. Gate
2. Drain
3. Source
(Flange)

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K1342 Summary of contents

Page 1

... Application High speed power switching www.DataSheet4U.com Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline 2SK1342 Silicon N-Channel MOS FET TO- Gate 2. Drain (Flange) 3. Source ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle www.DataSheet4U.com 2. Value Symbol ...

Page 3

... V — 0.9 — — 900 — rr 2SK1342 Unit Test conditions mA 100 720 ...

Page 4

... Power vs. Temperature Derating 150 100 Case Temperature T www.DataSheet4U.com Typical Output Characteristics Drain to Source Voltage V 4 100 150 (°C) C Pulse Test (V) DS Maximum Safe Operation Area 0.5 0.2 0 25°C ...

Page 5

... C Static Drain to Source on State Resistance vs. Drain Current 0.5 0.2 Pulse Test 0.1 0.05 0.2 0.5 1 Drain Current I (A) D Forward Transfer Admittance vs. Drain Current –25°C DS Pulse Test 25° 0.5 0.2 0.1 0.05 0.1 0.2 0 Drain Current I (A) D 2SK1342 75° ...

Page 6

... Body to Drain Diode Reverse Recovery Time 5,000 di/dt = 100 25°C, V Pulse Test 2,000 1,000 500 200 100 50 0.1 0.2 0.5 www.DataSheet4U.com Reverse Drain Current I Dynamic Input Characteristics 1,000 800 600 V DS 400 600 V 200 400 Gate Charge Qg (nc ...

Page 7

... Source to Drain Voltage V Normalized Transient Thermal Impedance vs. Pulse Width Pulse Width PW (s) Vout Monitor D.U (on) 2SK1342 1.6 2.0 ( 25°C C ch–c (t) = (t) · ch–c S ch–c = 1.25°C/ 25° 100 m 1 Waveforms ...

Page 8

Max www.DataSheet4U.com 3.6 5.45 0.5 4.8 0.3 0.2 2.0 1.0 0.2 0.9 1.0 5.45 0.5 0.2 1.5 2.8 0.6 0.2 Hitachi Code TO-3P JEDEC — EIAJ Conforms Weight (reference value) 5.0 g Unit: mm ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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