HAT2016R Hitachi Semiconductor, HAT2016R Datasheet

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HAT2016R

Manufacturer Part Number
HAT2016R
Description
Silicon N Channel Power MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HAT2016R
Manufacturer:
RENESAS
Quantity:
25 000
Part Number:
HAT2016R-EL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
HAT2016REL-Q
Manufacturer:
REN
Quantity:
2 000
Features
Outline
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
Silicon N Channel Power MOS FET
G
2
SOP–8
High Speed Power Switching
MOS1
S
D
7 8
1
D
HAT2016R
G
4
MOS2
8
7
6
S
D
5 6
5
3
D
1 2
3 4
1, 3
2, 4
5, 6, 7, 8 Drain
Source
Gate
ADE-208-438 H (Z)
9th. Edition
June 1997

Related parts for HAT2016R

HAT2016R Summary of contents

Page 1

... Silicon N Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable gate drive Low drive current High density mounting Outline SOP– HAT2016R MOS2 MOS1 ADE-208-438 H (Z) 9th ...

Page 2

... HAT2016R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note duty cycle 2. 1 Drive operation : When using the glass epoxy board (FR4 1.6 mm), PW 10s 3 ...

Page 3

... V — 0.9 1 — 45 — rr HAT2016R Unit Test Conditions 10mA 100 16V 10V 1mA 4A, V ...

Page 4

... HAT2016R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics 4 Drain to Source Voltage 4 100 0.3 0.1 0.03 0.01 150 200 0 ...

Page 5

... Pulse Test Pulse Test 0.2 0 0.005 8 10 0.2 V (V) GS Forward Transfer Admittance vs 0.5 0.2 120 160 0 HAT2016R vs. Drain Current 0 Drain Current I (A) D Drain Current Tc = – Pulse Test 0 Drain Current I ...

Page 6

... HAT2016R Body–Drain Diode Reverse Recovery Time 500 200 100 di/ 0.2 0 Reverse Drain Current Dynamic Input Characteristics 6 Gate Charge 6 10000 3000 1000 ...

Page 7

... Switching Time Test Circuit Vout Vin Monitor Monitor D.U. Vin Switching Characteristics = d(off) t d(on) 0 Drain Current I (A) D Switching Time Waveform 10% Vin Vout 10% 90% td(on) HAT2016R 10 90% 10% 90% td(off ...

Page 8

... HAT2016R Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.5 0.1 0.01 0.001 0.0001 100 10 Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 0.1 0.01 0.001 0.0001 100 100 When using the glass epoxy board (FR4 40x40x1.6 mm 100 m ...

Page 9

... Package Dimensions 5.0 Max 1.27 0.51 Max 6.2 Max 1.27 Max 0.15 0.25 M HAT2016R Unit – 8 FP–8DA Hitachi code EIAJ — JEDEC MS-012AA 9 ...

Page 10

... HAT2016R Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...

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