HAT2038 Hitachi Semiconductor, HAT2038 Datasheet

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HAT2038

Manufacturer Part Number
HAT2038
Description
Silicon N Channel Power MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

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Features
Outline
For Automotive Application ( at Type Code “J “)
Low on-resistance
Capable of 4 V gate drive
High density mounting
HAT2038R/HAT2038RJ
Silicon N Channel Power MOS FET
G
2
SOP–8
High Speed Power Switching
MOS1
S
D
7 8
1
D
G
4
MOS2
8
7
6
S
D
5 6
5
3
D
1 2
3 4
1, 3
2, 4
5, 6, 7, 8 Drain
Source
Gate
ADE-208-666C (Z)
February 1999
4th. Edition

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HAT2038 Summary of contents

Page 1

... HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET Features For Automotive Application ( at Type Code “J “) Low on-resistance Capable gate drive High density mounting Outline SOP– High Speed Power Switching ...

Page 2

... Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT2038R HAT2038RJ Avalanche energy HAT2038R HAT2038RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note duty cycle 2. 1 Drive operation : When using the glass epoxy board (FR4 1.6 mm), PW 10s 3 ...

Page 3

... V — 0.84 1 — 40 — rr HAT2038R/HAT2038RJ Unit Test Conditions mA 100 ...

Page 4

... HAT2038R/HAT2038RJ Main Characteristics Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics 3 Drain to Source Voltage 4 100 0.3 0.1 0.03 0.01 150 200 0.1 Ta (° ...

Page 5

... V (V) GS Forward Transfer Admittance vs Pulse Test 0.5 120 160 0.1 0.2 (°C) HAT2038R/HAT2038RJ vs. Drain Current Pulse Test 100 3 Drain Current I (A) D Drain Current = –25 °C 25 °C 75 ° 0.5 Drain Current I ...

Page 6

... HAT2038R/HAT2038RJ Body–Drain Diode Reverse Recovery Time 500 µ 200 100 0.1 0.2 0.5 1 Reverse Drain Current Dynamic Input Characteristics 100 Gate Charge 6 2000 1000 = °C 500 ...

Page 7

... Monitor Switching Time Waveform Vout Monitor R L 10% Vin V DD Vout = 30 V td(on) HAT2038R/HAT2038RJ Maximun Avalanche Energy vs. Channel Temperature Derating 100 µH duty < 0 > 100 125 Channel Temperature Tch (°C) Avalanche Waveform V DSS ...

Page 8

... HAT2038R/HAT2038RJ Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 0.1 0.01 0.001 0.0001 100 µ 10 µ 8 When using the glass epoxy board (FR4 40x40x1.6 mm ...

Page 9

... Package Dimensions 5.0 Max 1.27 0.51 Max 6.2 Max 1.27 Max 0.15 0.25 M HAT2038R/HAT2038RJ Unit – 8 Hitachi code FP–8DA — EIAJ MS-012AA JEDEC 9 ...

Page 10

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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