HUF75333G3 Intersil Corporation, HUF75333G3 Datasheet

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HUF75333G3

Manufacturer Part Number
HUF75333G3
Description
66A/ 55V/ 0.016 Ohm. N-Channel UltraFET Power MOSFETs
Manufacturer
Intersil Corporation
Datasheet
66A, 55V, 0.016 Ohm. N-Channel UltraFET
Power MOSFETs
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching convertors, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75333.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75333S3ST.
Packaging
HUF75333G3
HUF75333P3
HUF75333S3S
PART NUMBER
DRAIN
(TAB)
JEDEC STYLE TO-247
TO-247
TO-220AB
TO-263AB
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
PACKAGE
103
SABER
Data Sheet
SOURCE
75333G
75333P
75333S
DRAIN
is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
BRAND
GATE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
HUF75333G3, HUF75333P3, HUF75333S3S
SOURCE
GATE
JEDEC TO-263AB
Features
• 66A, 55V
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
Symbol
- Temperature Compensated PSPICE
- SPICE and SABER Thermal Impedance Models
- TB334, “Guidelines for Soldering Surface Mount
(FLANGE)
Models
Available on the WEB at:
www.Intersil.com/families/models.htm
Components to PC Boards”
DRAIN
(FLANGE)
DRAIN
June 1999
JEDEC TO-220AB
G
|
D
S
Copyright
File Number 4362.5
®
©
and SABER
Intersil Corporation 1999
SOURCE
DRAIN
GATE
©

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HUF75333G3 Summary of contents

Page 1

... NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75333S3ST. Packaging JEDEC STYLE TO-247 DRAIN (TAB) 103 SABER HUF75333G3, HUF75333P3, HUF75333S3S Features • 66A, 55V • Simulation Models - Temperature Compensated PSPICE Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.Intersil.com/families/models.htm • ...

Page 2

... HUF75333G3, HUF75333P3, HUF75333S3S Absolute Maximum Ratings T C Drain to Source Voltage (Note Drain to Gate Voltage (R = 20k ) (Note Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V Drain Current Continuous (Figure 2 Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P o Derate Above ...

Page 3

... HUF75333G3, HUF75333P3, HUF75333S3S Electrical Specifications PARAMETER CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge Typical Performance Curves 1.2 1.0 0.8 0.6 0.4 0 100 T , CASE TEMPERATURE ( C FIGURE 1 ...

Page 4

... HUF75333G3, HUF75333P3, HUF75333S3S Typical Performance Curves 1000 V = 10V GS 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 500 100 10 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON 55V DSS(MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 5. FORWARD BIAS SAFE OPERATING AREA 150 120 ...

Page 5

... HUF75333G3, HUF75333P3, HUF75333S3S Typical Performance Curves 2.5 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX V = 10V 66A GS D 2.0 1.5 1.0 0.5 -80 - JUNCTION TEMPERATURE ( J FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1 250 A D 1.1 1.0 0.9 0.8 -80 - JUNCTION TEMPERATURE ( J FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE NOTE: Refer to Intersil Application Notes AN7254 and AN7260 ...

Page 6

... HUF75333G3, HUF75333P3, HUF75333S3S Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT G(REF) FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 18. SWITCHING TIME TEST CIRCUIT 108 ...

Page 7

... HUF75333G3, HUF75333P3, HUF75333S3S PSPICE Electrical Model .SUBCKT HUF75333 rev 02/24/ 1.8e 1.73e-9 CIN 6 8 1.19e-9 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 58.85 EDS EGS ESG EVTHRES ...

Page 8

... HUF75333G3, HUF75333P3, HUF75333S3S SABER Electrical Model REV August 1997 template huf75333 n2, n1, n3 electrical n2, n1 var i iscl d..model dbodymod = (is = 1.3e-12, xti = 6, cjo = 1.7e- 40e- 0.45, vj=0.75) d..model dbreakmod = () d..model dplcapmod = (cjo = 1.8e- 1e-30 0. 1.45, fc=0.5) m..model mmedmod = (type=_n, vto = 3.183 1e-30, tox = 1) m..model mstrongmod = (type=_n, vto = 3.66 51. 1e-30, tox = 1) m ...

Page 9

... HUF75333G3, HUF75333P3, HUF75333S3S SPICE Thermal Model REV January 1999 HUF75333 CTHERM1 th 6 4.9e-4 CTHERM2 6 5 4.5e-3 CTHERM3 5 4 6.0e-3 CTHERM4 4 3 8.5e-3 CTHERM5 3 2 1.0e-2 CTHERM6 2 tl 5.0e-2 RTHERM1 th 6 6.0e-4 RTHERM2 6 5 6.8e-3 RTHERM3 5 4 3.3e-2 RTHERM4 4 3 9.7e-2 RTHERM5 3 2 3.3e-1 RTHERM6 2 tl 3.6e-1 SABER Thermal Model SABER thermal model HUF75333 ...

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