HMPSA13 Hi-Sincerity Mocroelectronics, HMPSA13 Datasheet

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HMPSA13

Manufacturer Part Number
HMPSA13
Description
NPN SILICON DARLINGTON TRASNSITOR
Manufacturer
Hi-Sincerity Mocroelectronics
Datasheet
HMPSA13
NPN SILICON DARLINGTON TRANSISTOR
Description
The HMPSA13 is designed for applications requiring extremely high
current gain at collector to 500mA.
Features
Absolute Maximum Ratings
Characteristics
Classification Of hFE3
HMPSA13
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature ................................................................................... +150 C Maximum
Total Power Dissipation (Ta=25 C) ............................................................................... 600 mW
VCBO Collector to Base Voltage ........................................................................................ 30 V
VCES Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage ........................................................................................... 10 V
IC Collector Current ....................................................................................................... 500 mA
High D.C. Current Gain
Complementary to HMPSA63
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
*VCE(sat)1
*VCE(sat)2
BVCBO
BVCES
BVEBO
Symbol
*hFE1
*hFE2
*hFE3
ICBO
IEBO
Cob
Rank
fT
SUN
N
Min.
125
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
30
30
10
10
5
-
-
-
-
-
-
VCE(sat)2
VCE(sat)2
1.2V
Typ.
1.0
50
-
-
-
-
-
-
-
-
-
-
Max.
100
100
1.5
6
-
-
-
-
-
-
-
-
hFE3
hFE3
20K
MHz
Unit
nA
nA
pF
V
V
V
V
V
K
K
K
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
IE=10uA, IC=0
VCB=30V, IE=0
VEB=10V, IC=0
VCE=5V, IC=10mA
VCB=10V, f=1MHz
IC=100uA, IE=0
IC=100uA, VBE=0
IC=100mA, IB=0.1mA
IC=500mA, IB=0.5mA
VCE=5V, IC=100mA
VCE=5V, IC=500mA
VCE=5V, IC=10mA, f=100MHz
Test Conditions
Spec. No. : HE6343
Issued Date : 1993.03.24
Revised Date : 2001.05.01
Page No. : 1/4
HSMC Product Specification

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HMPSA13 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HMPSA13 NPN SILICON DARLINGTON TRANSISTOR Description The HMPSA13 is designed for applications requiring extremely high current gain at collector to 500mA. Features High D.C. Current Gain Complementary to HMPSA63 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25 C) ...

Page 2

... On Voltage & Collector Current 10000 1000 V 100 0 Collector Current (mA) Cutoff Frequency & Collector Current 1000 V =5V CE 100 Collector Current (mA) HMPSA13 10000 hFE @ V =5V CE 100 1000 =5V BE(on) CE 100 1000 1000 100 1000 Spec. No. : HE6343 Issued Date : 1993.03.24 Revised Date : 2001.05.01 Page No. : 2/4 Saturation Voltage & ...

Page 3

... HI-SINCERITY MICROELECTRONICS CORP. PD-Ta 700 600 500 400 300 200 100 Ambient Temperature-Ta( HMPSA13 100 120 140 160 o C) Spec. No. : HE6343 Issued Date : 1993.03.24 Revised Date : 2001.05.01 Page No. : 3/4 HSMC Product Specification ...

Page 4

... Head Office And Factory : Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 HMPSA13 ...

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