HMPSA14 Hi-Sincerity Mocroelectronics, HMPSA14 Datasheet

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HMPSA14

Manufacturer Part Number
HMPSA14
Description
NPN SILICON TRANSISTOR
Manufacturer
Hi-Sincerity Mocroelectronics
Datasheet
HMPSA14
NPN SILICON TRANSISTOR
Description
The HMPSA14 is designed for applications requiring extremely high
current gain collector current to 500mA.
Features
Absolute Maximum Ratings
Characteristics
HMPSA14
*VCE(sat)
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature .................................................................................... +150 C Maximum
Total Power Dissipation (Ta=25 C) ................................................................................ 625 mW
VCBO Collector to Base Voltage ......................................................................................... 30 V
VCES Collector to Emitter Voltage ...................................................................................... 30 V
VEBO Emitter to Base Voltage ............................................................................................ 10 V
IC Collector Current ....................................................................................................... 500 mA
High D.C current Gain
HMPSA14 Complementary to HMPSA64
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
VBE(on)
BVCBO
BVEBO
Symbol
BVCES
*hFE1
*hFE2
ICBO
IEBO
Cob
fT
Min.
10K
20K
125
30
30
10
-
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
100
100
1.5
2
6
-
-
-
-
-
-
MHz
Unit
nA
nA
pF
V
V
V
V
V
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
IC=100uA, IE=0
IC=0.1mA, VBE=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=10V, IC=0
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
IC=10mA, VCE=5V
IC=100mA, VCE=5V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, f=1MHz
Test Conditions
Spec. No. : HE6305
Issued Date : 1992.09.09
Revised Date : 2002.02.21
Page No. : 1/4
HSMC Product Specification
TO-92

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HMPSA14 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HMPSA14 NPN SILICON TRANSISTOR Description The HMPSA14 is designed for applications requiring extremely high current gain collector current to 500mA. Features High D.C current Gain HMPSA14 Complementary to HMPSA64 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25 C) ...

Page 2

... BE(ON 1000 100 1 10 Collector Current-I Cutoff Frequency & Collector Current 1000 V =5V CE 100 Collector Current (mA) HMPSA14 1000 hFE @ V = 100 1000 (mA 125 C 100 1000 (mA) C 10000 100 1000 Spec. No. : HE6305 Issued Date : 1992.09.09 Revised Date : 2002 ...

Page 3

... HI-SINCERITY MICROELECTRONICS CORP. PD-Ta 700 600 500 400 300 200 100 100 Ambient Temperature-Ta ( HMPSA14 150 200 o C) Spec. No. : HE6305 Issued Date : 1992.09.09 Revised Date : 2002.02.21 Page No. : 3/4 HSMC Product Specification ...

Page 4

... Head Office And Factory: Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMPSA14 ...

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