HMPSA27 Hi-Sincerity Mocroelectronics, HMPSA27 Datasheet

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HMPSA27

Manufacturer Part Number
HMPSA27
Description
NPN SILICON TRANSISTOR
Manufacturer
Hi-Sincerity Mocroelectronics
Datasheet
HMPSA27
NPN SILICON TRANSISTOR
Description
The HMPSA27 is designed for darlington amplifier high current gain
collector current to 500mA.
Absolute Maximum Ratings
Characteristics
HMPSA27
*VCE(sat)
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature .................................................................................... +150 C Maximum
Total Power Dissipation (Ta=25 C) ................................................................................ 625 mW
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCES Collector to Emitter Voltage ...................................................................................... 60 V
VEBO Collector to Emitter Voltage ...................................................................................... 10 V
IC Collector Current........................................................................................................ 500 mA
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
VBE(on)
BVCBO
BVEBO
Symbol
BVCES
*hFE1
*hFE2
ICBO
IEBO
ICES
Min.
10K
10K
60
60
10
-
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
100
100
500
1.5
2
-
-
-
-
-
Unit
nA
nA
nA
V
V
V
V
V
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
IC=100uA, IE=0
IC=100uA, VBE=0
IE=10uA, IC=0
VCB=50V, IE=0
VEB=10V, IC=0
VCE=50V
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
Test Conditions
Spec. No. : HE6332
Issued Date : 1995.05.18
Revised Date : 2002.04.11
Page No. : 1/3
HSMC Product Specification
TO-92

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HMPSA27 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HMPSA27 NPN SILICON TRANSISTOR Description The HMPSA27 is designed for darlington amplifier high current gain collector current to 500mA. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25 C) ................................................................................ 625 mW Maximum Voltages and Currents (Ta=25 C) VCBO Collector to Base Voltage ...

Page 2

... C 1000 100 1 10 Collector Current-I Safe Operating Area 10000 P =1ms T P =100ms T 1000 P =1s T 100 Forward Voltage-V HMPSA27 10000 o 125 hFE @ V =5V CE 1000 (mA 125 C V BE(ON =5V 100 1000 (mA) C 100 (V) CE Spec. No. : HE6332 Issued Date : 1995 ...

Page 3

... Head Office And Factory: Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMPSA27 ...

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