2SA1190 Hitachi Semiconductor, 2SA1190 Datasheet - Page 3

• Manufacturer Part Number: 2SA1190
• Description: Silicon PNP Epitaxial
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
Collector to emitter
saturation voltage
Base to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Noise figure
Noise voltage reffered
to input
Notes: 1. The 2SA1190 and 2SA1191 are grouped by h
D
250 to 500
2. Pulse test
E
400 to 800
Symbol
V
V
V
I
I
h
V
V
Cob
NF
e
CBO
EBO
T
FE
n
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
*
1
2SA1190
Min
–90
–90
–5
—
—
250
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
–0.05 –0.15 —
–0.7
130
3.2
0.15
0.2
0.7
Max
—
—
—
–0.1
–0.1
800
–1.0
—
—
1.5
2.0
—
Min
–120 —
–120 —
–5
—
—
250
—
—
—
—
—
—
FE
2SA1191
as follows.
Typ
—
—
—
—
–0.05 –0.15 V
–0.7
130
3.2
0.15
0.2
0.7
Max
—
—
—
–0.1
–0.1
800
–1.0
—
—
1.5
2.0
—
Unit
V
V
V
V
MHz
pF
dB
dB
nV/
2SA1190, 2SA1191
A
A
Hz
Test conditions
I
I
I
V
V
V
I
I
I
V
I
V
f = 1 MHz
V
I
R
f = 1 kHz
V
I
R
f = 10 Hz
V
I
Rg = 0, f = 1 kHz
C
C
E
C
C
B
C
C
C
C
CB
EB
CE
CE
CB
CE
CE
CB
g
g
= –10 A, I
= –1 mA*
= –10 A, I
= –1 mA, R
= –2 mA*
= –10 mA,
= –10 mA
= –0.1 mA,
= –0.1 mA,
= –10 mA,
= 10 k
= 10 k
= –70 V, I
= –2 V, I
= –12 V,
= –6 V,
= –10 V, I
= –6 V,
= –6 V,
= –6 V,
2
2
C
C
E
E
E
BE
= 0
= 0
= 0
= 0
= 0,
=
3