2SA1310 Panasonic Semiconductor, 2SA1310 Datasheet
2SA1310
Manufacturer Part Number
2SA1310
Description
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SA1310.pdf
(2 pages)
Transistor
2SA1310
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC3312
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
FE
Features
Allowing supply with the radial taping.
Low noise voltage NV.
High foward current transfer ratio h
Optimum for high-density mounting.
Absolute Maximum Ratings
Electrical Characteristics
Rank
Rank classification
h
FE
Parameter
Parameter
180 ~ 360
R
260 ~ 520
Symbol
V
V
V
I
I
P
T
T
CP
C
S
C
j
stg
CBO
CEO
EBO
I
I
V
V
V
h
V
V
f
NV
CBO
CEO
T
FE
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
BE
*
(Ta=25˚C)
FE
360 ~ 700
–55 ~ +150
.
Ratings
T
–200
–100
–60
–55
300
150
–7
V
V
I
I
I
V
I
V
V
V
R
C
C
E
C
g
CB
CE
CE
CE
CB
CE
= –10 A, I
= –2mA, I
= –10 A, I
= –100mA, I
= 100k , Function = FLAT
= –10V, I
= –5V, I
= –1V, I
= –10V, I
= –10V, I
= –5V, I
Unit
mW
mA
mA
Conditions
C
C
˚C
˚C
E
B
V
V
V
C
E
B
C
E
= –2mA
= –30mA
= 2mA, f = 200MHz
= 0
= 0
= 0
B
= 0
= 0
= –1mA, G
= –10mA
V
= 80dB
1:Emitter
2:Collector
3:Base
min
–60
–55
180
–7
marking
1
1.27
EIAJ:SC–72
New S Type Package
4.0 0.2
2
1.27
200
typ
3
2.54 0.15
– 0.1
– 0.6
max
700
150
–1
–1
Unit: mm
MHz
Unit
mV
V
V
V
V
V
A
A
1
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2SA1310 Summary of contents
Page 1
... Transistor 2SA1310 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3312 Features Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio h Optimum for high-density mounting. Absolute Maximum Ratings Parameter Symbol Collector to base voltage ...
Page 2
... CE G =80dB V Function=FLAT 100 80 R =100k g 60 22k – 0.01 – 0.03 – 0.1 – 0.3 – Collector current I C 2SA1310 I — –120 V =–5V CE 25˚C –100 Ta=75˚C –25˚C –80 –60 –40 – – 0.4 – 0.8 –1.2 –1.6 –2 Base to emitter voltage V ...