2SA1323 Panasonic Semiconductor, 2SA1323 Datasheet
2SA1323
Manufacturer Part Number
2SA1323
Description
Silicon NPN epitaxial planer type(For high-frequency amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SA1323.pdf
(3 pages)
Transistor
2SA1323
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC3314
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitanse
FE
Features
Allowing supply with the radial taping.
High transition frequency f
Optimum for high-density mounting.
Absolute Maximum Ratings
Electrical Characteristics
Rank
Rank classification
h
FE
Parameter
Parameter
70 ~ 140
B
110 ~ 220
Symbol
V
V
V
I
I
P
T
T
CP
C
C
T
C
j
stg
CBO
CEO
EBO
.
I
I
I
h
V
V
f
NF
Z
C
CBO
CEO
EBO
T
FE
(Ta=25˚C)
Symbol
rb
CE(sat)
BE
re
*
(Ta=25˚C)
–55 ~ +150
Ratings
–30
–20
–60
–30
300
150
–5
V
V
V
V
I
V
V
V
V
V
C
CE
CB
CE
EB
CE
CE
CB
CB
CB
= –10mA, I
= –10V, I
= –20V, I
= –5V, I
= –10V, I
= –10V, I
= –10V, I
= –10V, I
= –10V, I
= –10V, I
Unit
mW
mA
mA
Conditions
C
˚C
˚C
C
V
V
V
B
C
C
E
B
E
E
E
= 0
= –1mA, f = 10.7MHz
= 0
= 1mA, f = 200MHz
= 1mA, f = 5MHz
= 1mA, f = 2MHz
= 0
= –1mA
= –1mA
= –1mA
1:Emitter
2:Collector
3:Base
min
150
70
marking
1
1.27
EIAJ:SC–72
New S Type Package
4.0 0.2
2
– 0.1
– 0.7
1.27
300
typ
2.8
1.2
22
3
2.54 0.15
– 0.1
–100
max
–10
220
4.0
2.0
50
Unit: mm
MHz
Unit
dB
pF
V
V
A
A
A
1
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2SA1323 Summary of contents
Page 1
... Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3314 Features Allowing supply with the radial taping. High transition frequency Optimum for high-density mounting. Absolute Maximum Ratings Parameter Symbol Collector to base voltage V CBO Collector to emitter voltage V CEO Emitter to base voltage ...
Page 2
... C C — =–1mA C f=10.7MHz Ta=25˚ –1 –3 –10 –30 –100 ( V ) Collector to emitter voltage V CE 2SA1323 I — –60 V =–10V CE –50 –40 25˚C Ta=75˚C –25˚C –30 –20 – – 0.4 – 0.8 –1.2 –1.6 –2 Base to emitter voltage V ...
Page 3
... Transistor NF — =–10V CB f=100MHz Ta=25˚ – 0.1 – 0.3 –1 –3 – Emitter current I E 2SA1323 3 ...