HBD140 Hi-Sincerity Mocroelectronics, HBD140 Datasheet

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HBD140

Manufacturer Part Number
HBD140
Description
PNP POWER TRANSISTORS
Manufacturer
Hi-Sincerity Mocroelectronics
Datasheet
HBD140
PNP POWER TRANSISTORS
Description
PNP power transistor in a TO-126 plastic package. NPN complements:
HBD139
Features
Applications
General purpose power applications, e.g. driver stages in hi-fi amplifiers and television circuits.
Limiting Values
Electrical Characteristics
*hFE1/hFE2
HBD140
High Current (max. 1.5A)
Low Voltage (max. 80V)
*VCE(sat)
Symbol
Symbol
ICBO
IEBO
*VBE
VCBO
VCEO
VEBO
Tamb
hFE
Tstg
ICM
IBM
fT
PD
IC
Tj
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Transition Frequency
DC current gain ratio of
the complementary pairs
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Peak Base Current
Total Dissipation at
Storage Temperature
Junction Temperature
Operating Ambient Temperature
HI-SINCERITY
MICROELECTRONICS CORP.
Parameter
Parametor
(Tj=25 C, unless otherwise specified)
IE=0, VCB=-30V
IC=0, VEB=-5V
IC=-500mA, IB=-50mA
IC=-500mA, VCE=-2V
VCE=-2V, IC=-5mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-500mA,
IC=-50mA, VCE=-5V, f=100MHz
|IC|=150mA, |VCE|=2V
Conditions
Open Emitter
Open Base
Open Collector
Ta=25 C
Tc=25 C
-
-
-
Conditions
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
Min.
-65
-65
-
-
-
-
-
-
-
-
-
Min.
40
63
25
-
-
-
-
-
-
Spec. No. : Preliminary Data
Issued Date : 2001.08.01
Revised Date : 2001.08.24
Page No. : 1/3
HSMC Product Specification
Typ. Max.
230
Max.
-100
1
-1.5
150
150
150
-
-
-
-
-
-
-
-80
1.2
15
-5
-2
-1
-100
-100
-0.5
250
1.6
-1
-
-
-
Unit
W
W
A
V
V
V
A
A
MHz
C
C
C
Unit
nA
nA
V
V
-
-
-
-

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HBD140 Summary of contents

Page 1

... IEBO Emitter Cut-off Current Collector-Emitter *VCE(sat) Saturation Voltage *VBE Base-Emitter Voltage hFE DC Current Gain fT Transition Frequency DC current gain ratio of *hFE1/hFE2 the complementary pairs HBD140 Parametor Open Emitter Open Base Open Collector Ta=25 C Tc= (Tj=25 C, unless otherwise specified) Conditions IE=0, VCB=-30V IC=0, VEB=-5V IC=-500mA, IB=-50mA ...

Page 2

... Collector Current-I Saturation Voltage & Collector Current 1000 V BE(sat) 100 1 10 100 Collector Current-I Safe Operating Arae 10 1 0.1 0. Forward Voltage (V) HBD140 1000 =2V CE 100 1000 10000 (mA) C 1000 @ I =10I C B 1000 10000 (mA) C PT=1mS PT=100mS PT=1S 100 1000 Spec ...

Page 3

... Head Office And Factory : Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 HBD140 ...

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