HBD238 Hi-Sincerity Mocroelectronics, HBD238 Datasheet
HBD238
Manufacturer Part Number
HBD238
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Hi-Sincerity Mocroelectronics
Datasheet
1.HBD238.pdf
(2 pages)
HBD238
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HBD238 is designed for medium power linear and switching
applications.
Absolute Maximum Ratings
Electrical Characteristics
Storage Temperature ............................................................................................ -50 ~ +150 C
Junction Temperature ................................................................................... +150 C Maximum
Total Power Dissipation (Tc=25 C) .................................................................................... 25 W
BVCBO Collector to Base Voltage ................................................................................... -100 V
BVCEO Collector to Emitter Voltage.................................................................................. -80 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
BVCER Emitter to Base Voltage ...................................................................................... -100 V
IC Collector Current ............................................................................................................. -2 A
IC Collector Current (Pulse) ................................................................................................ -6 A
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents
*VCE(sat)
*VBE(on)
*BVCEO
BVCBO
BVEBO
Symbol
*hFE1
*hFE2
ICBO
IEBO
fT
-100
Min.
-80
40
25
-5
3
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
Typ.
-
-
-
-
-
-
-
-
-
-
(Ta=25 C)
(Ta=25 C)
Max.
-100
-0.6
-1.3
-1
-
-
-
-
-
-
MHz
Unit
mA
uA
V
V
V
V
V
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
IC=-1mA
IC=-100mA
IE=-100uA
VCB=-100V
VBE=-5V
IC=-1A, IB=-0.1A
IC=-1A, VCE=-2V
IC=-150mA, VCE=-2V
IC=-1A, VCE=-2V
VCE=-10V, IC=-250mA, f=100MHz
Test Conditions
Spec. No. : HE6621-A
Issued Date : 1994.09.08
Revised Date : 2000.10.01
Page No. : 1/2
HSMC Product Specification
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HBD238 Summary of contents
Page 1
... HI-SINCERITY MICROELECTRONICS CORP. HBD238 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBD238 is designed for medium power linear and switching applications. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25 C) .................................................................................... 25 W Maximum Voltages and Currents BVCBO Collector to Base Voltage ...
Page 2
HI-SINCERITY MICROELECTRONICS CORP. TO-126ML Dimension 3-Lead TO-126ML Plastic Package HSMC Package Code : D Inches DIM Min. Max. A 0.1356 0.1457 B 0.0170 0.0272 C 0.0344 0.0444 D 0.0501 ...