NP061A3 Panasonic Semiconductor, NP061A3 Datasheet
NP061A3
Manufacturer Part Number
NP061A3
Description
Silicon PNP epitaxial planar transistor
Manufacturer
Panasonic Semiconductor
Datasheet
1.NP061A3.pdf
(3 pages)
www.DataSheet4U.com
Composite Transistors
NP061A3
Silicon PNP epitaxial planar transistor
For digital circuits
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2003
• SSS-Mini type 6-pin package, reduction of the mounting area and
• Maximum package height (0.4 mm) contributes to develop thinner
• UNR31A3 × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
assembly cost by one half
equipments
FE
Ratio
2. * : Ratio between one and another
*
Parameter
Parameter
*
a
Symbol
= 25°C ± 3°C
V
V
Symbol
h
T
V
R
P
I
T
V
FE(Small
CBO
CEO
V
/Large)
a
I
I
I
V
V
C
stg
1
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
= 25°C
CBO
CEO
FE
OH
OL
/ R
T
1
2
−55 to +125
Rating
I
I
V
V
V
V
V
I
V
V
V
C
C
C
−50
−50
−80
125
125
CB
CE
EB
CE
CE
CC
CC
CB
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJJ00258BED
= −50 V, I
= −6 V, I
= −10 V, I
= −10 V, I
= −50 V, I
= −5 V, V
= −5 V, V
= −10 V, I
Conditions
Unit
mW
B
C
mA
°C
°C
E
V
V
B
B
B
B
C
C
E
E
= 0
= 0
= 0
= − 0.3 mA
= − 0.5 V, R
= −3.5 V, R
= 0
= 0
= −5 mA
= −5 mA
= 1 mA, f = 200 MHz
L
Marking Symbol: 1P
Internal Connection
L
= 1 kΩ
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
= 1 kΩ
Display at No.1 lead
6
1
(0.35) (0.35)
0.12
1.00
5
2
+0.03
-0.02
±0.05
−30%
0.50
−4.9
Min
−50
−50
4
3
0.8
80
Tr1
6
1
0.99
Typ
1.0
47
80
2
5
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
SSSMini6-F1 Package
Tr2
4
3
− 0.25
+30%
− 0.1
− 0.5
− 0.1
− 0.2
Max
1.2
Unit: mm
0 to 0.02
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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NP061A3 Summary of contents
Page 1
... Composite Transistors NP061A3 Silicon PNP epitaxial planar transistor For digital circuits ■ Features • SSS-Mini type 6-pin package, reduction of the mounting area and assembly cost by one half • Maximum package height (0.4 mm) contributes to develop thinner equipments ■ Basic Part Number • UNR31A3 × 2 ■ ...
Page 2
... NP061A3 140 120 100 120 ( °C ) Ambient temperature T a 200 = − 85° 160 25°C 120 −25° −1 −10 −100 Collector current I (mA) C −10 = − ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...