PBSS5160T NXP Semiconductors, PBSS5160T Datasheet - Page 5

• Manufacturer Part Number: PBSS5160T
• Description: 60V 1A PNP low VCEsat (BISS) transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 May 27
handbook, halfpage
I
I
I
h
V
V
R
V
f
C
SYMBOL
amb
CBO
CES
EBO
T
FE
CEsat
BEsat
BEon
CEsat
c
60 V, 1 A
PNP low V
V
(1) T
(2) T
(3) T
Fig.4
CE
h FE
= 25 C unless otherwise specified.
600
400
200
= 5 V.
amb
amb
amb
0
10
= 100 C.
= 25 C.
= 55 C.
DC current gain as a function of collector
current; typical values.
1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
equivalent on-resistance
base-emitter turn-on voltage
transition frequency
collector capacitance
p
1
CEsat
300 s;
PARAMETER
10
(BISS) transistor
0.02.
10
(1)
(2)
(3)
2
10
I C (mA)
3
MLE124
10
4
V
V
V
V
V
V
V
I
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 1 A; I
= 50 mA; V
= 5 V; I
= 60 V; I
= 60 V; I
= 60 V; V
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
5
handbook, halfpage
B
B
B
CONDITIONS
C
= 100 mA; note 1
= 50 mA
= 100 mA; note 1
C
C
C
C
V
(1) T
(2) T
(3) T
Fig.5
E
E
E
CE
= 0 A
= 1 mA
= 500 mA; note 1
= 1 A; note 1
= 1 A
CE
BE
B
B
V BE
= 0 A
= 0 A; T
= I
(V)
= 5 V.
1.2
0 8
0 4
= 1 mA
= 50 mA
amb
amb
amb
= 0 V
= 10 V;
0
e
10
= 0 A; f = 1 MHz
= 55 C.
= 25 C.
= 100 C.
Base-emitter voltage as a function of
collector current; typical values.
1
j
= 150 C
1
10
200
150
100
150
MIN.
10
(1)
(3)
(2)
www.DataSheet4U.com
2
350
250
160
220
220
9
TYP.
PBSS5160T
Product specification
110
120
220
0.95
0.82
10
I C (mA)
3
330
15
MAX. UNIT
MLE122
100
50
100
100
160
175
330
1.1
0.9
10
4
nA
nA
nA
mV
mV
mV
V
m
V
MHz
pF
A