PBSS5160T NXP Semiconductors, PBSS5160T Datasheet - Page 7

• Manufacturer Part Number: PBSS5160T
• Description: 60V 1A PNP low VCEsat (BISS) transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2004 May 27
handbook, halfpage
60 V, 1 A
PNP low V
T
(1) I
(2) I
(3) I
(4) I
Fig.10 Collector current as a function of
amb
(A)
1.6
1.2
0.8
0.4
I C
B
B
B
B
= 25 C.
2
0
= 40 mA.
= 36 mA.
= 32 mA.
= 28 mA.
0
collector-emitter voltage; typical values.
1
CEsat
(6)
(5) I
(6) I
(7) I
(8) I
(5)
B
B
B
B
2
(BISS) transistor
(4)
= 24 mA.
= 20 mA.
= 16 mA.
= 12 mA.
(3)
3
(2)
(10)
(1)
(7)
(8)
(9)
(9) I
(10) I
4
V CE (V)
B
B
MLE125
= 8 mA.
= 4 mA.
5
7
handbook, halfpage
R CEsat
I
(1) T
Fig.11 Equivalent on-resistance as a function of
C
/I
( )
B
10
10
10
= 20.
10
amb
1
3
2
1
10
= 100 C.
collector current; typical values.
1
1
(2) T
10
amb
(2)
= 25 C.
10
(1)
(3)
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2
PBSS5160T
Product specification
(3) T
10
3
I C (mA)
MLE121
amb
= 55 C.
10
4