C1568 Panasonic Semiconductor, C1568 Datasheet

C1568

Manufacturer Part Number

C1568

Description

Search -----> 2SC1568

Manufacturer

Panasonic Semiconductor

Datasheet

1.C1568.pdf (4 pages)

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Power Transistors

2SC1568

Silicon NPN epitaxial planar type

For low-voltage type medium output power amplification

Complementary to 2SA0900

■ Features

■ Absolute Maximum Ratings T

■ Electrical Characteristics T

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: January 2003

• Low collector-emitter saturation voltage V

• Satisfactory operation performances and high efficiency with a low-

• TO-126B package which incorporates a unique construction en-

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

(Common base, input open circuited)

voltage power supply

abling installation to the heat sink without using insulation parts

2. * : Rank classification

Rank

Parameter

FE1

90 to 155

Symbol

= 25°C ± 3°C

Symbol

CBO

CEO

EBO

130 to 210

stg

CE(sat)

BE(sat)

FE1

CBO

CEO

CBO

CEO

EBO

FE2

= 25°C

CE(sat)

−55 to +150

Rating

150

1.2

= 10 µA, I

= 1 mA, I

= 1 A, I

= 500 mA, I

SJD00093BED

= 18 V, I

= 2 V, I

= 6 V, I

= 10 V, I

= 6 V, I

180 to 280

= 50 mA

Conditions

Unit

= −50 mA, f = 200 MHz

= 0

= 500 mA

= 1.5 A

= 0, f = 1 MHz

°C

= 0

= 50 mA

φ 3.16

±0.1

0.75

±0.1

8.0

4.6

Min

+0.5

–0.1

±0.2

2.3

0.5

Typ

100

150

±0.2

±0.1

TO-126B-A1 Package

0.5

Max

280

0.5

1.2

±0.1

1: Emitter

2: Collector

3: Base

Unit: mm

1.76

3.2

MHz

Unit

µA



±0.2

±0.1

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C1568 Summary of contents

Page 1

... Power Transistors www.DataSheet4U.com 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 ■ Features • Low collector-emitter saturation voltage V • Satisfactory operation performances and high efficiency with a low- voltage power supply • TO-126B package which incorporates a unique construction en- abling installation to the heat sink without using insulation parts ■ ...

Page 2

... (1)With a 100×100×2mm Al heat sink (2)Without heat sink 5 Class B push pull 120 160 ( °C ) Ambient temperature T a  CE(sat =100˚C C 25˚C –25˚C 0.1 0.01 0.01 0 ...

Page 3

... T I CEO 120 ( °C ) Ambient temperature T a Safe operation area 10 =18V t=1s DC 0.1 0.01 0.001 0 160 Collector-emitter voltage V SJD00093BED Single pulse T =25˚C C t=10ms 100 ( 2SC1568 3 ...

Page 4

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products ...

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