VTB6061J PerkinElmer Optoelectronics, VTB6061J Datasheet

VTB6061J

Manufacturer Part Number

VTB6061J

Description

VTB Process Photodiodes

Manufacturer

PerkinElmer Optoelectronics

Datasheet

1.VTB6061J.pdf (1 pages)

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PRODUCT DESCRIPTION

Large area planar silicon photodiode in a “flat”

window, three lead TO-8 package. Chip is

isolated from case. The third lead allows case to

be grounded. These diodes have very high

shunt resistance and have good blue response.

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C

SYMBOL

VTB Process Photodiodes

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

TC V

TC R

TC I

NEP

range

1/2

Short Circuit Current

Open Circuit Voltage

Dark Current

Shunt Resistance

Junction Capacitance

Sensitivity

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

Temperature Coefficient

CHARACTERISTIC

H = 100 fc, 2850 K

2850 K

H = 100 fc, 2850 K

2850 K

H = 0, VR = 2.0 V

H = 0, V = 10 mV

H = 0, V = 0

365 nm

TEST CONDITIONS

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

Operating Temperature:

(See also VTB curves, pages 21-22)

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

Min.

260

320

CHIP ACTIVE AREA: .058 in

CASE 15 TO-8 HERMETIC

1.1 x 10

5.7 x 10

VTB6061J

inch (mm)

Typ.

350

490

-2.0

-8.0

920

±55

.12

.10

8.0

0.1

-14

(Typ.)

VTB6061J

-40°C to 110°C

(37.7 mm

Max.

1100

.23

2.0

)

cm Hz

Degrees

UNITS

mV/°C

%/°C

A/W

µA

/ W

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