ipp100n08n3g Infineon Technologies Corporation, ipp100n08n3g Datasheet - Page 4

• Manufacturer Part Number: ipp100n08n3g
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
120
10
10
10
10
80
40
DS
0
3
2
1
0
C
10
0
); T
)
-1
C
p
=25 °C; D =0
50
limited by on-state
resistance
10
0
T
V
C
DS
100
[°C]
[V]
DC
10 ms
1 ms
10
1
100 µs
150
10 µs
1 µs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
80
60
40
20
=f(t
10
10
10
10
0
C
-1
-2
1
0
); V
0
10
p
)
0.02
0.01
-5
single pulse
0.05
0.2
0.5
0.1
GS
≥10 V
IPP100N08N3 G IPI100N08N3 G
p
10
/T
50
-4
10
T
-3
t
C
100
p
[°C]
[s]
10
-2
IPB097N08N3 G
150
10
-1
2008-12-05
200
10
0