mrfe6s9125n Freescale Semiconductor, Inc, mrfe6s9125n Datasheet
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mrfe6s9125n Summary of contents
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... RF Device Data Freescale Semiconductor = 28 Volts Volts 700 mA 700 mA out Document Number: MRFE6S9125N Rev. 0, 10/2007 MRFE6S9125NR1 MRFE6S9125NBR1 880 MHz AVG SINGLE N - CDMA, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 PLASTIC MRF6S9125NR1 CASE 1484 - 04, STYLE 1 ...
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... Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part is internally input matched. MRFE6S9125NR1 MRFE6S9125NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol ...
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... W, 920 - 960 MHz DQ out — 19 — — 62 — — — — 125 — = 950 mA, 865 - 900 MHz Bandwidth — 10 — — 0.93 — — 0.011 — — 0.205 — MRFE6S9125NR1 MRFE6S9125NBR1 Unit rms dBc dBc MHz dB dB/°C dBm/°C 3 ...
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... Microstrip Z7 0.236″ x 0.620″ Microstrip Z8 0.050″ x 0.620″ Microstrip Z9 0.238″ x 0.620″ Microstrip Figure 1. MRFE6S9125NR1(NBR1) Test Circuit Schematic Table 6. MRFE6S9125NR1(NBR1) Test Circuit Component Designations and Values Part Chip Capacitor C2 6.2 pF Chip Capacitor C3, C15 0.8 - 8.0 pF Variable Capacitors, Gigatrim ...
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... C10 C1 Figure 2. MRFE6S9125NR1(NBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor C8 C7 C20 C21 C6 C19 R2 C18 C4 R1 C11 C14 L2 L1 C13 C2 C12 C5 C3 C22 V DD C23 C17 C16 C15 900 MHz TO272 WB Rev. 0 MRFE6S9125NR1 MRFE6S9125NBR1 5 ...
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... Vdc 880 MHz 880.1 MHz DD Two−Tone Measurements OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRFE6S9125NR1 MRFE6S9125NBR1 6 TYPICAL CHARACTERISTICS Vdc (Avg.) DD out I = 950 mA, N−CDMA IS−95 DQ Pilot, Sync, Paging, Traffic Codes ...
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... W (PEP) DD out = 950 mA, Two−Tone Measurements IM5−U IM5−L 10 TWO−TONE SPACING (MHz) versus Tone Spacing Ideal Actual −10 −20 85_C 25_C −30 85_C −40 25_C −30_C −50 85_C −30_C −60 85_C −70 25_C −80 100 200 MRFE6S9125NR1 MRFE6S9125NBR1 80 7 ...
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... −30_C 85_C 25_C η OUTPUT POWER (WATTS) CW out Figure 11. Power Gain and Drain Efficiency versus CW Output Power MRFE6S9125NR1 MRFE6S9125NBR1 8 TYPICAL CHARACTERISTICS 80 21 −30_C 70 25_C 20 60 85_C Vdc 950 mA DQ ...
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... FREQUENCY (MHz) MRFE6S9125NR1 MRFE6S9125NBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . ...
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... MHz Z Z Figure 16. Series Equivalent Source and Load Impedance MRFE6S9125NR1 MRFE6S9125NBR1 900 MHz Z load f = 860 MHz = 5 Ω source f = 860 MHz Vdc 950 mA Avg out source load MHz Ω Ω 860 0.62 - j2.13 1.48 - j0.14 865 0.64 - j2.31 1.56 - j0.09 870 0.62 - j2.45 1.66 - j0.02 875 ...
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... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRFE6S9125NR1 MRFE6S9125NBR1 11 ...
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... MRFE6S9125NR1 MRFE6S9125NBR1 12 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRFE6S9125NR1 MRFE6S9125NBR1 13 ...
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... MRFE6S9125NR1 MRFE6S9125NBR1 14 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRFE6S9125NR1 MRFE6S9125NBR1 15 ...
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... MRFE6S9125NR1 MRFE6S9125NBR1 16 RF Device Data Freescale Semiconductor ...
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... AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Oct. 2007 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRFE6S9125NR1 MRFE6S9125NBR1 17 ...
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... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRFE6S9125NR1 MRFE6S9125NBR1 Document Number: MRFE6S9125N Rev. 0, 10/2007 18 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...