mrfe6s9125n Freescale Semiconductor, Inc, mrfe6s9125n Datasheet - Page 3

• Manufacturer Part Number: mrfe6s9125n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V
P
Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) V
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
out
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Power Gain
Drain Efficiency
Input Return Loss
P
Video Bandwidth @ 125 W PEP P
Gain Flatness in 35 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
out
(f = 880 MHz)
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
( - 30°C to +85°C)
( - 30°C to +85°C)
= 60 W Avg., 920 - 960 MHz, EDGE Modulation
@ 1 dB Compression Point, CW
Characteristic
out
where IM3 = - 30 dBc
(T
out
C
= 25°C unless otherwise noted)
= 27 W Avg.
DD
= 28 Vdc, I
Symbol
(continued)
ΔP1dB
DD
P1dB
EVM
VBW
SR1
SR2
G
G
IRL
ΔG
η
η
G
ps
ps
D
D
F
= 28 Vdc, I
DQ
= 950 mA, 865 - 900 MHz Bandwidth
Min
DQ
—
—
—
—
—
—
—
—
—
—
—
—
—
DD
MRFE6S9125NR1 MRFE6S9125NBR1
= 700 mA, P
= 28 Vdc, I
0.205
0.011
0.93
Typ
125
- 63
- 78
- 12
1.8
20
40
19
62
10
DQ
out
= 700 mA,
= 125 W, 920 - 960 MHz
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
dBm/°C
% rms
dB/°C
MHz
Unit
dBc
dBc
dB
dB
dB
dB
W
%
%
3