mrfe6s9125n Freescale Semiconductor, Inc, mrfe6s9125n Datasheet - Page 7

• Manufacturer Part Number: mrfe6s9125n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
−100
−20
−40
−60
−80
0
1
Figure 7. Intermodulation Distortion Products
V
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
3rd Order
DD
= 28 Vdc, I
5th Order
7th Order
P
out
versus Output Power
, OUTPUT POWER (WATTS) PEP
DQ
= 950 mA
10
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain
60
59
58
57
56
55
54
53
52
51
50
70
60
50
40
30
20
10
0
29
1
P1dB = 51.92 dBm
(155.6 W)
V
f = 880 MHz, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes
8 Through 13
and Drain Efficiency versus Output Power
G
Figure 9. Pulsed CW Output Power versus
DD
ps
P3dB = 52.83 dBm (191.87 W)
30
= 28 Vdc, I
TYPICAL CHARACTERISTICS
η
100
31
D
P
out
DQ
, OUTPUT POWER (WATTS) AVG.
32
P
= 950 mA
in
P6dB = 53.39 dBm (218.27 W)
ACPR
, INPUT POWER (dBm)
Input Power
V
12 μsec(on), 1% Duty Cycle, f = 880 MHz
33
400
DD
10
= 28 Vdc, I
ALT1
34
35
DQ
−10
−20
−30
−40
−50
−60
T
= 950 mA, Pulsed CW
C
−30_C
36
= −30_C
1
Figure 8. Intermodulation Distortion Products
25_C
IM7−L
IM3−U
IM7−U
V
I
(f1 + f2)/2 = Center Frequency of 880 MHz
IM3−L
DQ
−30_C
DD
37
85_C
= 950 mA, Two−Tone Measurements
= 28 Vdc, P
100
Ideal
IM5−U
38
−30_C
25_C
Actual
85_C
IM5−L
25_C
85_C
85_C
25_C
MRFE6S9125NR1 MRFE6S9125NBR1
versus Tone Spacing
TWO−TONE SPACING (MHz)
200
out
39
−10
−20
−30
−40
−50
−60
−70
−80
= 125 W (PEP)
10
80
7