mrf7s19210h Freescale Semiconductor, Inc, mrf7s19210h Datasheet - Page 10

• Manufacturer Part Number: mrf7s19210h
• Description: N - Channel Enhancement - Mode Lateral Mosfets
• Manufacturer: Freescale Semiconductor, Inc

MRF7S19210HR3 MRF7S19210HSR3
10
60
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58
57
56
55
54
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NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
29
versus Input Power @ 28 V @ 1930 MHz
P1dB = 54.35 dBm (272 W)
30
Figure 13. Pulsed CW Output Power
P1dB
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Test Impedances per Compression Level
P3dB = 55.27 dBm (337 W)
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P
in
5.72 - j5.51
, INPUT POWER (dBm)
V
10 μsec(on), 10% Duty Cycle, f = 1930 MHz
Z
DD
33
source
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
Ω
= 28 Vdc, I
34
DQ
35
= 1400 mA, Pulsed CW
1.30 - j0.69
36
Z
load
Ideal
Ω
37
Actual
38
39
60
59
58
57
56
55
54
53
52
51
50
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
29
versus Input Power @ 28 V @ 1990 MHz
Figure 14. Pulsed CW Output Power
30
P1dB
P1dB = 54.29 dBm (269 W)
31
Test Impedances per Compression Level
32
P
in
6.20 + j1.19
, INPUT POWER (dBm)
V
10 μsec(on), 10% Duty Cycle, f = 1990 MHz
P3dB = 55.25 dBm (335 W)
Z
DD
33
source
Ω
= 28 Vdc, I
34
Freescale Semiconductor
DQ
35
= 1400 mA, Pulsed CW
36
1.09 - j046
Z
RF Device Data
load
Ω
37
Ideal
Actual
38
39