mrf7s19210h Freescale Semiconductor, Inc, mrf7s19210h Datasheet - Page 7

• Manufacturer Part Number: mrf7s19210h
• Description: N - Channel Enhancement - Mode Lateral Mosfets
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
20
15
10
−5
5
0
1550
Figure 8. Broadband Frequency Response
1650
V
P
I
DQ
DD
out
1750
= 1400 mA
= 9 dBm
= 28 Vdc
1850
f, FREQUENCY (MHz)
1950
IRL
Gain
24
22
20
18
16
14
12
Figure 7. Single - Carrier W - CDMA Power Gain, Drain
2050
1
ACPR
V
Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth
T
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
DD
G
C
Efficiency and ACPR versus Output Power
ps
= −30_C
= 28 Vdc, I
2150
TYPICAL CHARACTERISTICS
η
P
2250
D
out
DQ
, OUTPUT POWER (WATTS) AVG.
= 1400 mA, f = 1960 MHz
25_C
2350
10
0
−2
−4
−6
−8
−10
85_C
10
10
10
10
10
9
8
7
6
5
25_C
90
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 9. MTTF versus Junction Temperature
100
110
25_C
85_C
−30_C
−30_C
85_C
T
130
J
DD
, JUNCTION TEMPERATURE (°C)
300
MRF7S19210HR3 MRF7S19210HSR3
= 28 Vdc, P
60
50
40
30
20
10
0
150
out
170
= 63 W Avg., and η
−5
−10
−15
−20
−25
−30
−35
190
210
D
= 29%.
230
250
7