mrf7s19210h Freescale Semiconductor, Inc, mrf7s19210h Datasheet - Page 3

• Manufacturer Part Number: mrf7s19210h
• Description: N - Channel Enhancement - Mode Lateral Mosfets
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
IMD Symmetry @ 160 W PEP, P
VBW Resonance Point
Gain Flatness in 60 MHz Bandwidth @ P
Average Deviation from Linear Phase in 60 MHz Bandwidth
Average Group Delay @ P
Part - to - Part Insertion Phase Variation @ P
Gain Variation over Temperature
Output Power Variation over Temperature
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
@ P
f = 1960 MHz, Six Sigma Window
( - 30°C to +85°C)
( - 30°C to +85°C)
out
= 190 W CW
`
30 dBc
out
Characteristic
= 190 W CW, f = 1960 MHz
out
where IMD Third Order
(T
out
C
= 25°C unless otherwise noted)
out
= 63 W Avg.
= 190 W CW,
DD
= 28 Vdc, I
(continued)
Symbol
VBW
IMD
ΔP1dB
Delay
ΔΦ
ΔG
G
Φ
sym
F
DQ
res
= 1400 mA, 1930 - 1990 MHz Bandwidth
Min
—
—
—
—
—
—
—
—
MRF7S19210HR3 MRF7S19210HSR3
0.019
0.008
0.95
2.82
28.9
Typ
0.9
15
50
Max
—
—
—
—
—
—
—
—
dBm/°C
dB/°C
MHz
MHz
Unit
dB
ns
°
°
3