mrf7s19100n Freescale Semiconductor, Inc, mrf7s19100n Datasheet
mrf7s19100n
Related parts for mrf7s19100n
mrf7s19100n Summary of contents
Page 1
... MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 = 28 Volts 1930 - 1990 MHz AVG ...
Page 2
... Adjacent Channel Power Ratio Input Return Loss 11/ Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF7S19100NR1 MRF7S19100NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol I DSS ...
Page 3
... out F Delay = 100 W CW ΔΦ out ΔG ΔP1dB Min Typ Max = 1000 mA, 1930 - 1990 MHz Bandwidth — 30 — — 1 — — 2.15 — — 28.8 — — 0.019 — — 0.015 — MRF7S19100NR1 MRF7S19100NBR1 Unit MHz dB ns ° dB/°C dBm/°C 3 ...
Page 4
... Microstrip Z6 0.452″ x 0.080″ Microstrip Z7 0.161″ x 0.880″ Microstrip Figure 1. MRF7S19100NR1(NBR1) Test Circuit Schematic Table 6. MRF7S19100NR1(NBR1) Test Circuit Component Designations and Values Part C1 10 μ Tantalum Capacitor C2, C5, C6, C10, C11 10 μ Chip Capacitors C3 ...
Page 5
... MRF7S19100N/NB Rev. 1 Figure 2. MRF7S19100NR1(NBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor C10 C11 C9 MRF7S19100NR1 MRF7S19100NBR1 5 ...
Page 6
... Vdc 1955 MHz 1965 MHz DD Two −Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S19100NR1 MRF7S19100NBR1 6 TYPICAL CHARACTERISTICS G ps η Vdc (Avg.), I = 1000 mA DD out DQ Single − ...
Page 7
... Figure 10. Power Gain and Drain Efficiency versus CW Output Power = 28 Vdc 100 W (PEP 1000 mA out DQ IM3 −U IM3 −L IM5 −U IM5 −L 10 TWO −TONE SPACING (MHz) versus Tone Spacing 50 Ideal Actual 25_C 50 85_C 100 300 MRF7S19100NR1 MRF7S19100NBR1 100 7 ...
Page 8
... W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. 0.001 PAR = 7 0.01% Probability on CCDF 0.0001 PEAK −TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRF7S19100NR1 MRF7S19100NBR1 8 TYPICAL CHARACTERISTICS 1000 1960 MHz ...
Page 9
... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load f = 1880 MHz Output Matching Network MRF7S19100NR1 MRF7S19100NBR1 9 ...
Page 10
... P , INPUT POWER (dBm) in NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level Z source Ω P3dB 4.39 - j5.66 Figure 16. Pulsed CW Output Power versus Input Power MRF7S19100NR1 MRF7S19100NBR1 Ideal 58 P3dB = 52.20 dBm (165. P1dB = 50.94 dBm 54 Actual (124. 1000 mA ...
Page 11
... E .551 .559 14 14.2 E1 .353 .357 8.97 9.07 E2 .132 .140 3.35 3.56 E3 .124 .132 3.15 3.35 E4 .270 − − − 6.86 − − − E5 .346 .350 8.79 8.89 F .025 BSC 0.64 BSC b1 .164 .170 4.17 4.32 c1 .007 .011 0.18 0.28 e .106 BSC 2.69 BSC aaa .004 0.10 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE MRF7S19100NR1 MRF7S19100NBR1 11 ...
Page 12
... MRF7S19100NR1 MRF7S19100NBR1 12 RF Device Data Freescale Semiconductor ...
Page 13
... RF Device Data Freescale Semiconductor MRF7S19100NR1 MRF7S19100NBR1 13 ...
Page 14
... MRF7S19100NR1 MRF7S19100NBR1 14 RF Device Data Freescale Semiconductor ...
Page 15
... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF7S19100N Rev. 2, 8/2006 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...