mrf7s19100n Freescale Semiconductor, Inc, mrf7s19100n Datasheet - Page 7

• Manufacturer Part Number: mrf7s19100n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
1
Figure 7. Intermodulation Distortion Products
V
f1 = 1955 MHz, f2 = 1965 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
DD
5th Order
3rd Order
= 28 Vdc, I
7th Order
P
out
DQ
, OUTPUT POWER (WATTS) PEP
versus Output Power
= 1000 mA
10
20
19
18
17
16
15
14
−1
−2
−3
−4
−5
1
0
Figure 10. Power Gain and Drain Efficiency
Compression (PARC) versus Output Power
−1 dB = 25 W
η
Figure 9. Output Peak - to - Average Ratio
20
1
D
G
−2 dB = 35 W
ps
TYPICAL CHARACTERISTICS
T
P
versus CW Output Power
C
out
100
P
= −30_C
, OUTPUT POWER (WATTS) CW
out
30
85_C
25_C
, OUTPUT POWER (WATTS)
−3 dB = 47 W
V
f = 1960 MHz, Input PAR = 7.5 dB
200
DD
= 28 Vdc, I
10
40
V
I
f = 1960 MHz
DQ
DD
DQ
= 1000 mA
= 28 Vdc
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−5
= 1000 mA
1
50
Figure 8. Intermodulation Distortion Products
IM7 −U
IM7 −L
V
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−30_C
DD
= 28 Vdc, P
100
60
25_C
Actual
85_C
Ideal
versus Tone Spacing
IM5 −U
IM5 −L
out
TWO −TONE SPACING (MHz)
MRF7S19100NR1 MRF7S19100NBR1
300
= 100 W (PEP), I
IM3 −U
60
50
40
30
20
10
0
IM3 −L
50
45
40
35
30
25
20
10
DQ
= 1000 mA
100
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