mrf7s19100n Freescale Semiconductor, Inc, mrf7s19100n Datasheet - Page 3

• Manufacturer Part Number: mrf7s19100n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 οhm system) V
Video Bandwidth
Gain Flatness in 60 MHz Bandwidth @ P
Group Delay @ P
Part - to - Part Insertion Phase Variation @ P
Gain Variation over Temperature
Output Power Variation over Temperature
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
out
= 100 W CW, f = 1960 MHz
Characteristic
(T
out
C
out
= 25°C unless otherwise noted) (continued)
= 100 W CW
= 100 W CW
DD
= 28 Vdc, I
Symbol
ΔP1dB
Delay
VBW
ΔΦ
ΔG
G
F
DQ
= 1000 mA, 1930 - 1990 MHz Bandwidth
Min
—
—
—
—
—
—
MRF7S19100NR1 MRF7S19100NBR1
0.019
0.015
2.15
28.8
Typ
30
1
Max
—
—
—
—
—
—
dBm/°C
dB/°C
MHz
Unit
dB
ns
°
3