mrf5s4140h Freescale Semiconductor, Inc, mrf5s4140h Datasheet - Page 5

• Manufacturer Part Number: mrf5s4140h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
23
22
21
20
19
18
17
6
1550 mA
1250 mA
950 mA
650 mA
Figure 5. Two - Tone Power Gain versus
10
V
Two−Tone Measurements, 2.5 MHz Tone Spacing
DD
I
= 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz
P
DQ
out
= 1850 mA
, OUTPUT POWER (WATTS) PEP
Output Power
Figure 3. Single - Carrier N - CDMA Broadband Performance
Figure 4. Single - Carrier N - CDMA Broadband Performance
21.5
20.5
19.5
18.5
17.5
16.5
20.8
20.3
19.8
19.3
18.8
18.3
17.8
17.3
16.8
16.3
15.8
21
20
19
18
17
16
430
430
TYPICAL CHARACTERISTICS — 460 - 470 MHz
η
η
D
D
100
440
440
ALT1
ALT1
@ P
@ P
450
450
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
out
out
G
G
V
I
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
400
= 28 Watts Avg.
DQ
= 56 Watts Avg.
V
I
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
ps
DD
ps
DQ
ACPR
DD
460
460
= 1250 mA, N−CDMA IS−95
= 28 Vdc, P
= 1250 mA, N−CDMA IS−95
= 28 Vdc, P
ACPR
IRL
470
470
out
out
−10
−15
−20
−25
−30
−35
−40
−45
= 56 W (Avg.)
= 28 W (Avg.)
10
Figure 6. Third Order Intermodulation Distortion
IRL
V
Two−Tone Measurements, 2.5 MHz Tone Spacing
DD
I
480
DQ
480
= 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz
= 650 mA
950 mA
P
490
490
out
38
35
32
29
26
−40
−45
−50
−55
−60
−65
−70
55
50
45
40
35
−35
−40
−45
−50
−55
−60
, OUTPUT POWER (WATTS) PEP
versus Output Power
MRF5S4140HR3 MRF5S4140HSR3
1850 mA
−1
−3
−5
−7
−9
−11
−13
−2
−4
−6
−8
−10
−12
−14
1550 mA
100
1250 mA
400
5