mrf5s4140h Freescale Semiconductor, Inc, mrf5s4140h Datasheet - Page 6

• Manufacturer Part Number: mrf5s4140h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

6
MRF5S4140HR3 MRF5S4140HSR3
−25
−30
−35
−40
−45
−50
−55
−60
10
Figure 7. Intermodulation Distortion Products
V
f2 = 467.5 MHz, Two−Tone Measurements
DD
3rd Order
7th Order
5th Order
= 28 Vdc, I
P
out
DQ
versus Output Power
, OUTPUT POWER (WATTS) PEP
= 1250 mA, f1 = 465 MHz
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain
TYPICAL CHARACTERISTICS — 460 - 470 MHz
60
56
52
48
44
40
50
40
30
20
10
0
19
1
V
N−CDMA IS−95 (Pilot, Sync, Paging
Traffic Codes 8 Through 13)
25_C
DD
and Drain Efficiency versus Output Power
Figure 9. Pulse CW Output Power versus
= 28 Vdc, I
P1dB = 52.21 dBm (166 W)
100
23
85_C
G
P
out
ps
DQ
P3dB = 52.99 dBm (198 W)
, OUTPUT POWER (WATTS) AVG.
= 1250 mA, f = 465 MHz
P
in
T
, INPUT POWER (dBm)
200
C
η
Input Power
= −30_C
27
D
25_C
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 465 MHz
P6dB = 53.57 dBm (227 W)
25_C
DD
= 28 Vdc, I
25_C
10
−30_C
−10
−20
−30
−40
−50
31
85_C
85_C
0
0.1
−30_C
Figure 8. Intermodulation Distortion Products
DQ
V
I
(f1 + f2)/2 = Center Frequency of 465 MHz
DQ
Ideal
DD
= 1250 mA
= 1250 mA, Two−Tone Measurements
ALT1
= 28 Vdc, P
35
ACPR
Actual
versus Tone Spacing
out
TWO−TONE SPACING (MHz)
= 100 W (PEP)
60
39
1
−35
−43
−51
−59
−67
−75
3rd Order
5th Order
Freescale Semiconductor
10
RF Device Data
7th Order
60