mrf5s9101n Freescale Semiconductor, Inc, mrf5s9101n Datasheet - Page 2

• Manufacturer Part Number: mrf5s9101n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF5S9101NR1 MRF5S9101NBR1
2
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Forward Transconductance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Input Return Loss
P
1. Part internally input matched.
out
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
DS
@ 1 dB Compression Point, CW
= 68 Vdc, V
= 26 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 10 Vdc, I
DS
D
D
D
D
GS
GS
= 400 μAdc)
= 700 mAdc)
= 6 Adc)
= 2 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Test Methodology
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 26 Vdc, P
Symbol
V
Rating
V
V
out
P1dB
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
G
IRL
DSS
DSS
GSS
g
η
3
oss
rss
= 100 W, I
fs
ps
D
DQ
Min
100
Package Peak Temperature
—
—
—
—
—
—
—
—
16
56
—
2
= 700 mA, f = 960 MHz
0.21
17.5
260
Typ
110
- 15
2.8
3.7
2.2
70
60
—
—
—
1C (Minimum)
7
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
3.5
0.3
10
19
—
—
—
—
—
—
- 9
1
1
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dB
dB
°C
pF
pF
%
W
S