mrf1001a

Manufacturer Part Numbermrf1001a
DescriptionNpn Silicon High Frequency Transistor
ManufacturerAdvanced Semiconductor, Inc.
mrf1001a datasheet
 


Page 1/1

Download datasheet (64Kb)Embed
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
ASI MRF1001A
The
is a High
Frequency Transistor Designed for
Amplifier and Oscillator Applications.
MAXIMUM RATINGS
I
200 mA
C
20 V
V
CE
1.0 W @ T
= 25 °C
P
C
DISS
T
-65 °C to +200 °C
J
T
-65 °C to +200 °C
STG
θ
175 °C/W
JC
CHARACTERISTICS
T
= 25 °C
C
SYMBOL
TEST CONDITIONS
BV
I
= 5.0 mA
CEO
C
BV
I
= 1.0 mA
CBO
C
= 100 µA
BV
I
EBO
C
I
V
= 10 V
CBO
CB
V
= 3.5 V
I
EBO
EB
V
= 5.0 V
I
h
CE
C
FE
V
I
= 50 mA
I
= 10 mA
CE(SAT)
C
B
f
V
= 14 V
I
t
CE
C
G
Umax
V
= 14 V
I
CC
C
MAG
f = 300 MHz
2
|S
|
21
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
PACKAGE STYLE TO-39
MINIMUM
20
30
3.5
= 50 mA
50
= 90 mA
f = 300 MHz
= 90 mA
P
= 1.0 W
out
10
Specifications are subject to change without notice.
MRF1001A
1 = Emitter
2 = Base
3 = Collector
NONE
TYPICAL
MAXIMUM
UNITS
V
V
V
µA
50
µA
100
300
---
100
V
3.0
GHz
11.5
dB
11.7
dB
11.13
dB
REV. A
1/1