mrf6vp21kh Freescale Semiconductor, Inc, mrf6vp21kh Datasheet - Page 2

• Manufacturer Part Number: mrf6vp21kh
• Description: Rf Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor, Inc

MRF6VP21KHR6
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests
100 μsec Pulse Width, 20% Duty Cycle
1. Each side of device measured separately.
2. Measurement made with device in push - pull configuration.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Gate - Source Leakage Current
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
(V
(I
(V
(V
(V
(V
(V
(V
(V
(V
D
GS
DS
DS
DS
DD
GS
DS
DS
DS
= 300 mA, V
= 50 Vdc, V
= 100 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
(2)
GS
DS
D
D
D
(1)
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
= 1600 μAdc)
GS
= 150 mAdc, Measured in Functional Test)
= 4 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
= 0 Vdc)
(1)
(2)
(1)
(1)
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 50 Vdc, I
V
Symbol
V
V
V
(BR)DSS
DQ
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
C
G
IRL
GSS
DSS
DSS
η
oss
rss
iss
ps
D
= 150 mA, P
Min
110
1.5
—
—
—
—
—
—
—
22
65
—
1
out
= 1000 W Peak (200 W Avg.), f = 225 MHz,
1.68
0.28
67.5
Typ
147
506
- 15
2.2
3.3
24
—
—
—
—
IV (Minimum)
A (Minimum)
2 (Minimum)
Class
Freescale Semiconductor
Max
100
3.5
20
26
—
—
—
—
—
—
- 9
5
3
RF Device Data
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
mA
dB
dB
pF
pF
pF
%