mrf6vp21kh Freescale Semiconductor, Inc, mrf6vp21kh Datasheet - Page 5

• Manufacturer Part Number: mrf6vp21kh
• Description: Rf Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
1000
28
26
24
22
20
18
100
26
25
24
23
22
21
20
19
10
Figure 4. Capacitance versus Drain - Source Voltage
1
10
10
Figure 6. Pulsed Power Gain and Drain Efficiency
0
V
Pulse Width = 100 μsec, Duty Cycle = 20%
DD
150 mA
= 50 Vdc, I
375 mA
Figure 8. Pulsed Power Gain versus
C
rss
750 mA
P
P
10
V
1500 mA
out
out
DS
DQ
C
, OUTPUT POWER (WATTS) PULSED
, OUTPUT POWER (WATTS) PULSED
, DRAIN−SOURCE VOLTAGE (VOLTS)
3600 mA
iss
C
V
Pulse Width = 100 μsec, Duty Cycle = 20%
versus Output Power
= 150 mA, f = 225 MHz
oss
DD
= 50 Vdc, f = 225 MHz
Output Power
Measured with ±30 mV(rms)ac @ 1 MHz
V
GS
100
20
100
= 0 Vdc
I
DQ
G
ps
= 6000 mA
η
D
30
TYPICAL CHARACTERISTICS
40
1000
1000
2000
2000
50
80
70
60
50
40
30
20
10
100
65
64
63
62
61
60
59
58
57
56
55
28
24
20
16
12
10
1
30
0
1
31
T
Figure 7. Pulsed Output Power versus
200
C
P1dB = 60.37 dBm (1088.93 W)
Figure 9. Pulsed Power Gain versus
= 25°C
Figure 5. DC Safe Operating Area
V
32
P3dB = 61.33 dBm (1358.31 W)
DD
V
P
DS
out
400
P
= 30 V
, DRAIN−SOURCE VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS) PULSED
in
33
, INPUT POWER (dBm) PULSED
600
V
Pulse Width = 100 μsec, Duty Cycle = 20%
Output Power
Input Power
DD
34
35 V
= 50 Vdc, I
10
35
800
40 V
T
J
DQ
36
I
Pulse Width = 100 μsec
Duty Cycle = 20%
1000
T
= 150°C
DQ
J
= 150 mA, f = 225 MHz
= 200°C
= 150 mA, f = 225 MHz
45 V
37
MRF6VP21KHR6
1200
38
T
50 V
J
Ideal
= 175°C
1400
100
Actual
39
1600
200
40
5