fll300ll-1 Eudyna Devices Inc, fll300ll-1 Datasheet

fll300ll-1

Manufacturer Part Number

fll300ll-1

Description

L-band Medium & High Power Gaas Fet

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLL300LL-1.pdf (6 pages)

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Edition 1.2

July 1999

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

CASE STYLE: IL

FEATURES

• High Output Power: P 1dB = 44.5dBm (Typ.)

• High Gain: G 1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2)

• High PAE: η add = 44% (Typ.)

• Proven Reliability

• Hermetically Sealed Package

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

* Under fixed VGS bias condition

DESCRIPTION

The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are

specifically designed to provide high power at L-Band frequencies with

gain, linearity and efficiency superior to that of silicon devices. The

performance in multitone environments for Class AB operation make

them ideally suited for base station applications.

Eudyna stringent Quality Assurance Program assures the highest

reliability and consistent performance.

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Drain Current

Power added Efficiency

Thermal Resistance

Channel Temperature Rise

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Output Power

at 1dB G.C.P.

Power Gain

at 1dB G.C.P.

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 80.4 and -17.4 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

gate resistance of 25Ω.

Item

FLL300IL-1, FLL300IL-2, FLL300IL-3

FLL300IL-1

FLL300IL-2

FLL300IL-3

FLL300IL-1

FLL300IL-2

FLL300IL-3

Symbol

V GSO

I DSS

P 1dB

G 1dB

η add

∆T ch

I dsr

g m

R th

V p

Symbol

V GS

V DS

T stg

T ch

P T

V DS = 5V, V GS = 0V

V DS = 5V, I DS = 7200mA

V DS = 5V, I DS = 720mA

I GS = -720µA

V DS = 10V

I DS = 0.5 I DSS

V DS = 10V

I DS = 0.5 I DSS (Typ.)

Channel to Case

(10V x I ds r - P out + P in) x R th

Test Conditions*

L-Band Medium & High Power GaAs FET

(Typ.)

Condition

T c = 25°C

f=900MHz

f=1.8GHz

f=2.6GHz

f=900MHz

f=1.8GHz

f=2.6GHz

Min.

43.0

11.0

10.0

8.0

-1.0

-5

-65 to +175

Rating

Limit

6000

Typ.

100

175

44.5

13.0

12.0

10.0

-2.0

6.0

1.1

-5

G.C.P.: Gain Compression Point

Max.

-3.5

8.0

1.5

°C/W

dBm

Unit

°C

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fll300ll-1 Summary of contents

Page 1

FLL300IL-1, FLL300IL-2, FLL300IL-3 FEATURES • High Output Power: P 1dB = 44.5dBm (Typ.) • High Gain: G 1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) • High PAE: η add = 44% (Typ.) • Proven Reliability • Hermetically Sealed Package DESCRIPTION The FLL300IL-1, ...

Page 2

FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET 120 100 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE POWER DERATING CURVE 0 50 100 150 Case Temperature (° =0V -0.5V -1.0V ...

Page 3

FREQUENCY S11 (MHZ) MAG ANG 500 .961 176.7 600 .957 174.7 700 .956 172.5 800 .955 170.6 900 .948 168.2 1000 .943 166.0 1100 ...

Page 4

FLL300IL-2 L-Band Medium & High Power GaAs FET +j50 +j25 2.6 2.2 2.4 2.0 1.8 2.4 1.4 +j10 1.6 2.6 2.2 1.8 1.2 1.6 1.2 2 50Ω 2.8 3.0 -j10 3.0 -j25 -j50 FREQUENCY S11 (MHZ) MAG ...

Page 5

FREQUENCY S11 (MHZ) MAG ANG 1500 .902 130.6 1600 .872 123.3 1700 .829 114.2 1800 .756 102.9 1900 .645 88.8 ...

Page 6

FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET 4 4-R 1.3±0.15 (0.051) Case Style "IL" Metal-Ceramic Hermetic Package 1.0 (0.039) 16.4 (0.646) 1. Gate 2. Source (Flange) 3. Drain 4. Source (Flange) 20.4±0.2 (0.803) 24±0.2 ...

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