fll400lp-3 Eudyna Devices Inc, fll400lp-3 Datasheet

fll400lp-3

Manufacturer Part Number

fll400lp-3

Description

Fll400lp-3 L-band Medium & High Power Gaas Fet

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLL400LP-3.pdf (4 pages)

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Edition 1.4

December 1999

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25 C)

CASE STYLE: IP

Note 1: The device shall be measured at a constant V GS condition.

FEATURES

• Push-Pull Configuration

• High Power Output: 35W (Typ.)

• High PAE: 43% (Typ.)

• Broad Frequency Range: 2300 to 2500 MHz.

• Suitable for class A operation at 10V

DESCRIPTION

The FLL400IP-3 is a 35 Watt GaAs FET that employs a push-pull design that

offers ease of matching, greater consistency and a broader bandwidth for high

power S-band amplifiers. This product is targeted to reduce the size and

complexity of highly linear, high power base station transmitting amplifiers.

This new product is uniquely suited for use in Wireless Local Loop (WLL) base

station amplifiers as it offers high gain, long term reliability and ease of use.

Eudyna stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25 C)

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

Drain Current

Transconductance

Pinch-Off Voltage

Gate-Source Breakdown Voltage

Output Power at 1 dB G.C.P.

Power Gain at 1 dB G.C.P.

Drain Current

Power-Added Efficiency

Output Power at 1 dB G.C.P.

Power Gain at 1 dB G.C.P.

Thermal Resistance

and class AB operation at 12V

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

1. The drain-source operating voltage (V DS ) should not exceed 12 volts.

2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145 C.

gate resistance of 25

Parameter

Item

Symbol

V GS

V DS

T stg

T ch

P T

DSS

DSR

GSO

1dB

add

1dB

f = 2.5 GHz

Channel to Case

L-Band Medium & High Power GaAs FET

= 2A

= 5A (Note 1)

= -720 A

= 5V, V

= 5V, I

= 12V

= 10V

Tc = 25 C

Condition

Conditions

= 720mA

= 7.2A

= 0V

Min.

44.5

-1.0

8.0

-65 to +175

-5

Rating

+175

107

-5

Limits

6000

Typ.

FLL400IP-3

45.5

44.5

-2.0

9.0

6.0

9.0

1.0

G.C.P.: Gain Compression Point

Max.

-3.5

8.0

1.4

Unit

dBm

Unit

C/W

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