fll400lp-2 Eudyna Devices Inc, fll400lp-2 Datasheet
fll400lp-2
Manufacturer Part Number
fll400lp-2
Description
L-band Medium & High Power Gaas Fet
Manufacturer
Eudyna Devices Inc
Datasheet
1.FLL400LP-2.pdf
(4 pages)
CASE STYLE: IP
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25 C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
DESCRIPTION
The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain,
long term reliability and ease of use.
APPLICATIONS
• Solid State Base-Station Power Amplifier.
• PCS/PCN Communication Systems.
Edition 1.6
December 1999
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25 C)
FEATURES
• Push-Pull Configuration
• High Power Output: 35W (Typ.)
• High PAE: 44% (Typ.)
• Broad Frequency Range: 800 to 2000 MHz.
• Suitable for class A operation at 10V
Thermal Resistance
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
and class AB operation at 12V
1. The drain-source operating voltage (V DS ) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with
3. The operating channel temperature (T ch ) should not exceed 145 C.
gate resistance of 25
Parameter
Item
Symbol
Symbol
V
V
T
T
P
V
G
G
GS
stg
P
P
DS
I
I
ch
R
T
DSS
gm
DSR
V
GSO
1dB
add
1dB
1dB
1dB
th
p
Channel to Case
V
V
V
I
V
f=1.96GHz
I
V
f=1.96GHz
I
L-Band Medium & High Power GaAs FET
GS
DS
DS
DS
DS
DS
DS
DS
1
= 2A
= 2A
= -720 A
Tc = 25 C
Condition
= 5V, V
= 5V, I
= 5V, I
= 12V
= 10V
Conditions
DS
DS
GS
=7.2A
=720mA
=0V
Min.
44.5
-65 to +175
-1.0
9.0
-5
-
-
-
-
-
-
-
Rating
+175
107
15
-5
Limits
FLL400IP-2
6000
Typ.
45.5
10.0
44.5
10.0
-2.0
6.0
1.0
12
44
-
G.C.P.: Gain Compression Point
Max.
-3.5
8.0
1.4
16
-
-
-
-
-
-
-
Unit
W
V
V
C
C
Unit
dBm
dBm
mS
C/W
dB
dB
%
A
V
V
A
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fll400lp-2 Summary of contents
Page 1
FEATURES • Push-Pull Configuration • High Power Output: 35W (Typ.) • High PAE: 44% (Typ.) • Broad Frequency Range: 800 to 2000 MHz. • Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-2 ...
Page 2
FLL400IP-2 L-Band Medium & High Power GaAs FET POWER DERATING CURVE 120 100 100 Case Temperature ( ...
Page 3
L-Band Medium & High Power GaAs FET OUTPUT POWER vs. IMD - 12V - - 1.96GHz -18 - +5.0MHz -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 ...
Page 4
FLL400IP-2 L-Band Medium & High Power GaAs FET 45 6 2-R1.3 0.2 (0.051) Case Style "IP" Metal-Ceramic Hermetic Package 22 0.2 (0.866) 18.6 0.2 (0.732) 2-1 0.1 (0.039) (0.039 2-1.4 5 (0.055) (0.197) 13.8 0.2 ...