2sk1314stl-e Renesas Electronics Corporation., 2sk1314stl-e Datasheet - Page 2

• Manufacturer Part Number: 2sk1314stl-e
• Description: Silicon N Channel Mos Fet
• Manufacturer: Renesas Electronics Corporation.

2SK1313(L), 2SK1313(S), 2SK1314(L), 2SK1314(S)
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source
breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain
current
Gate to source cutoff voltage
Static drain to source on
state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note:
Rev.2.00 Sep 07, 2005 page 2 of 7
2. Value at T
3. Pulse test
Item
10 s, duty cycle
C
= 25
Item
2SK1313
2SK1314
2SK1313
2SK1314
2SK1313
2SK1314
°
C
1%
2SK1313
2SK1314
Symbol
V
V
V
R
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
t
t
I
I
V
GS(off)
|y
DS(on)
d(on)
d(off)
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
Min
450
500
2.0
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
30
Symbol
I
D(pulse)
Pch*
V
V
Tstg
Tch
I
DSS
GSS
I
DR
0.95
Typ
D
640
160
300
1.0
1.2
4.0
20
10
25
50
30
—
—
—
—
—
2
*
1
Max
250
3.0
1.4
1.5
—
—
—
—
—
—
—
—
—
—
—
—
10
–55 to +150
Ratings
Unit
450
500
150
pF
pF
pF
20
50
ns
ns
ns
ns
ns
V
V
V
S
V
30
5
5
A
A
I
I
V
V
V
I
I
I
V
f = 1 MHz
I
R
I
I
di
D
G
D
D
D
D
F
F
GS
DS
DS
DS
L
F
= 5 A, V
= 5 A, V
= 10 mA, V
= 1 mA, V
= 2.5 A, V
= 2.5 A, V
= 2.5 A, V
= 100 µA, V
/dt = 100 A/ s
= 12
= 360 V, V
= 400 V, V
= 10 V, V
= 25 V, V
Test conditions
GS
GS
DS
GS
DS
GS
= 0
= 0,
GS
GS
GS
GS
DS
= 10 V
= 10 V *
= 10 V *
= 10 V,
Unit
DS
(Ta = 25°C)
(Ta = 25°C)
°
°
= 0
= 0,
W
V
V
A
A
A
C
C
= 0
= 0
= 0
= 0
3
3