2sk1314stl-e Renesas Electronics Corporation., 2sk1314stl-e Datasheet - Page 3

• Manufacturer Part Number: 2sk1314stl-e
• Description: Silicon N Channel Mos Fet
• Manufacturer: Renesas Electronics Corporation.

2SK1313(L), 2SK1313(S), 2SK1314(L), 2SK1314(S)
Main Characteristics
Rev.2.00 Sep 07, 2005 page 3 of 7
60
40
20
10
10
0
8
6
4
2
0
8
6
4
2
0
Drain to Source Saturation Voltage
Drain to Source Voltage V
Gate to Source Voltage V
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature T
vs. Gate to Source Voltage
10 V
10
4
50
6 V
20
8
V
GS
5.5 V
5.0 V
4.5 V
= 4 V
I
D
30
12
5 A
2 A
= 1 A
100
Pulse Test
Pulse Test
C
16
40
GS
( C)
DS
(V)
(V)
150
50
20
0.05
1.0
0.5
0.2
0.1
1.0
0.5
0.2
0.1
50
20
10
10
10
5
2
8
6
4
2
0
5
2
0.5
1
Drain to Source Voltage V
Gate to Source Voltage V
Ta = 25 C
Typical Transfer Characteristics
V
Pulse Test
Maximum Safe Operation Area
Static Drain to Source on State
Pulse Test
Resistance vs. Drain Current
DS
1.0
3
= 20 V
2
Drain Current I
2
10
–25 C
4
V
30
GS
5
2SK1313
2SK1314
= 10 V
6
10
100
75 C
D
T
C
(A)
= 25 C
20
GS
300
DS
8
15 V
(V)
(V)
1,000
10
50