2sk1314stl-e Renesas Electronics Corporation., 2sk1314stl-e Datasheet - Page 5

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2sk1314stl-e

Manufacturer Part Number
2sk1314stl-e
Description
Silicon N Channel Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
2SK1313(L), 2SK1313(S), 2SK1314(L), 2SK1314(S)
Rev.2.00 Sep 07, 2005 page 5 of 7
Vin = 10 V
0.03
0.01
1.0
0.3
0.1
Switching Time Test Circuit
3
10
Vin Monitor
D = 1
0.05
0.02
0.5
0.2
0.1
50
100
D.U.T
Normalized Transient Thermal Impedance vs. Pulse Width
10
V
8
6
4
2
0
R
DD
L
Vout Monitor
Source to Drain Voltage V
.
= 30 V
Pulse Test
.
1 m
Reverse Drain Current vs.
5, 10 V
Source to Drain Voltage
0.4
Pulse Width PW (S)
0.8
10 m
V
GS
1.2
= 0, –10 V
1.6
SD
t d (on)
Vout
Vin
(V)
100 m
2.0
ch–c (t) =
ch–c = 2.50 C/W, T
P
10 %
DM
10 %
90 %
t r
Waveforms
T
PW
S
(t)
1
t d (off)
T
90 %
C
ch–c
= 25 C
C
D =
= 25 C
90 %
PW
T
10 %
10
t f

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