2sk1314stl-e Renesas Electronics Corporation., 2sk1314stl-e Datasheet - Page 4

• Manufacturer Part Number: 2sk1314stl-e
• Description: Silicon N Channel Mos Fet
• Manufacturer: Renesas Electronics Corporation.

2SK1313(L), 2SK1313(S), 2SK1314(L), 2SK1314(S)
Rev.2.00 Sep 07, 2005 page 4 of 7
5,000
2,000
1,000
500
200
100
500
400
300
200
100
50
0
5
4
3
2
1
0
–40
0.1
di/dt = 100 A/ s, Ta = 25 C
V
Pulse Test
Reverse Drain Current I
V
Pulse Test
Static Drain to Source on State
Body to Drain Diode Reverse
Dynamic Input Characteristics
GS
V
GS
0.2
Resistance vs. Temperature
Case Temperature T
DS
= 0
= 10 V
8
0
Gate Charge Qg (nc)
V
Recovery Time
DD
V
250 V
100 V
0.5
DD
400 V
= 100 V
16
40
250 V
= 400 V
1.0
I
D
V
GS
= 5 A
24
80
2
C
1 A
I
DR
D
120
32
( C)
= 5 A
5
2 A
(A)
160
10
40
20
16
12
8
4
0
1,000
500
200
100
100
1.0
0.5
0.2
0.1
10
50
20
10
10
5
2
1
5
0.05
0.1
0
Drain to Source Voltage V
V
Pulse Test
V
PW = 2 s, duty < 1%
DS
Forward Transfer Admittance
GS
0.2
0.1
Switching Characteristics
= 20 V
= 10 V V
Drain to Source Voltage
10
Typical Capacitance vs.
Drain Current I
Drain Current I
vs. Drain Current
0.2
0.5
Ciss
20
DD
1.0
0.5
= 30 V
•
t
t
t
•
d (off)
f
r
Coss
Crss
T
t
30
d (on)
C
1.0
D
= 25 C
2
D
75 C
–25 C
(A)
(A)
V
f = 1 MHz
GS
40
DS
2
= 0
5
(V)
50
10
5