2pb709axw-series NXP Semiconductors, 2pb709axw-series Datasheet - Page 2

• Manufacturer Part Number: 2pb709axw-series
• Description: 2pb709aw Pnp General Purpose Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP transistor in an SC-70 (SOT323) plastic package.
NPN complement: 2PD601AW
MARKING
Note
1. * = p: made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data
2002 Jun 26
2PB709AQW
2PB709ARW
2PB709ASW
V
V
V
I
I
P
T
T
T
C
CM
SYMBOL
stg
j
amb
High collector current (max. 100 mA)
Low collector-emitter saturation voltage (max. 500 mV).
General purpose switching and amplification.
CBO
CEO
EBO
tot
PNP general purpose transistor
* = t: made in Malaysia.
Handbook SC18”.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
N5*
N7*
N9*
(1)
open emitter
open base
open collector
T
amb
2
25 C; note 1
PINNING
CONDITIONS
handbook, halfpage
Fig.1
PIN
1
2
3
Top view
Simplified outline SC-70 (SOT323)
and symbol.
base
emitter
collector
1
3
65
65
MIN.
DESCRIPTION
2
Product specification
MAM048
200
+150
150
+150
45
45
6
100
200
2PB709AW
MAX.
1
3
2
V
V
V
mA
mA
mW
C
C
C
UNIT