s908gr32ag3vfa Freescale Semiconductor, Inc, s908gr32ag3vfa Datasheet - Page 47

• Manufacturer Part Number: s908gr32ag3vfa
• Description: M68hc08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

2.6.6 FLASH-1 Program Operation
Programming of the FLASH-1 memory is done on a row basis. A row consists of 64 consecutive bytes
with address ranges as follows:
During the programming cycle, make sure that all addresses being written to fit within one of the ranges
specified above. Attempts to program addresses in different row ranges in one programming cycle will fail.
Use this step-by-step procedure to program a row of FLASH-1 memory.
The FLASH programming algorithm flowchart is shown in
A. Programming and erasing of FLASH locations can not be performed by code being executed from the
B. While these operations must be performed in the order shown, other unrelated operations may occur
C. It is highly recommended that interrupts be disabled during program/erase operations.
D. Do not exceed t
Freescale Semiconductor
10. Clear the PGM bit.
11. Wait for time, t
12. Clear the HVEN bit.
13. Wait for a time, t
1. Set the PGM bit in the FLASH-1 control register (FL1CR). This configures the memory for program
2. Read the FLASH-1 block protect register (FL1BPR).
3. Write to any FLASH-1 address within the row address range desired with any data.
4. Wait for time, t
5. Set the HVEN bit.
6. Wait for time, t
7. Write data byte to the FLASH-1 address to be programmed.
8. Wait for time, t
9. Repeat steps 7 and 8 until all the bytes within the row are programmed.
•
•
•
•
same FLASH array.
between the steps. However, care must be taken to ensure that these operations do not access any
address within the FLASH array memory space such as the COP control register (COPCTL) at
$FFFF.
programming time to the same row before next erase. t
$XX00 to $XX3F
$XX40 to $XX7F
$XX80 to $XXBF
$XXC0 to $XXFF
operation and enables the latching of address and data programming.
t
NVS
+ t
NVH
MC68HC908GR60A • MC68HC908GR48A • MC68HC908GR32A Data Sheet, Rev. 5
+ t
PROG
NVS
PGS
PROG
NVH
PGS
RCV
Only bytes which are currently $FF may be programmed.
maximum or t
(minimum 10 μs).
(minimum 5 μs).
(minimum 5 μs)
+ (t
, (typically 1 μs) after which the memory can be accessed in normal read mode.
(minimum 30 μs).
PROG X
64)
HV
≤
maximum. t
t
HV
maximum
NOTE
NOTE
HV
is defined as the cumulative high voltage
Figure
HV
must satisfy this condition:
2-6.
FLASH-1 Memory (FLASH-1)
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