mt46h32m32lfcm-6 Micron Semiconductor Products, mt46h32m32lfcm-6 Datasheet - Page 21

• Manufacturer Part Number: mt46h32m32lfcm-6
• Description: 1gb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Table 10:
PDF: 09005aef82ce3074/Source: 09005aef82cd0158
1gb_ddr_mobile_sdram_t48m_density__2.fm - Rev. G 07/08 EN
Parameter
Access window of DQs from
CK/CK#
Clock cycle time
CK high-level width
CK low-level width
CKE minimum pulse width (high
and low)
Auto precharge write recovery +
precharge time
DQ and DM input hold time
relative to DQS (fast slew rate)
DQ and DM input hold time
relative to DQS (slow slew rate)
DQ and DM input setup time
relative to DQS (fast slew rate)
DQ and DM input setup time
relative to DQS (slow slew rate)
DQ and DM input pulse width (for
each input)
Access window of DQS from
CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS–DQ skew, DQS to last DQ
valid, per group, per access
WRITE command to first DQS
latching transition
DQS falling edge from CK rising –
hold time
DQS falling edge to CK rising –
setup time
Data valid output window (DVW)
Half-clock period
Data-out High-Z window
from CK/CK#
Data-out Low-Z window from CK/
CK#
Address and control input hold
time (fast slew rate)
Address and control input hold
time (slow slew rate)
Electrical Characteristics and Recommended AC Operating Conditions
Notes: 1–9 apply to all the parameters in this table; V
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
Symbol
t
t
DQSCK
t
t
t
t
DQSQ
DQSH
t
DIPW
DQSL
DQSS
t
t
t
t
t
t
t
t
t
t
t
t
DAL
DSH
t
t
t
CKE
DH
DH
DSS
n/a
t
DS
DS
AC
CH
IH
IH
CK
HP
HZ
CL
LZ
F
S
f
s
f
s
Min
t
0.45
0.45
0.75
t
2.0
2.0
0.6
0.7
0.6
0.7
1.8
2.0
2.0
0.4
0.4
0.2
0.2
QH -
t
1.0
0.9
1.1
CH,
12
CL
5
1
–
–
–
–
-5
t
DQSQ
Max
0.55
0.55
1.25
5.0
6.5
5.0
6.5
0.6
0.6
0.4
5.0
6.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
21
t
Min
0.45
0.45
0.75
t
2.0
2.0
5.4
0.6
0.7
0.6
0.7
1.9
2.0
2.0
0.4
0.4
0.2
0.2
QH -
t
1.0
1.0
1.2
CH,
12
CL
1
–
–
–
–
DD
-54
t
/V
DQSQ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Max
0.55
0.55
0.45
1.25
DD
5.0
6.5
5.0
6.5
0.6
0.6
5.0
6.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q = 1.70–1.95V
1Gb: x16, x32 Mobile DDR SDRAM
t
Min
0.45
0.45
0.75
t
2.0
0.2
0.2
QH -
t
2.0
2.0
0.6
0.7
0.6
0.7
2.1
2.0
0.4
0.4
CH,
1.0
1.1
1.2
12
CL
6
1
–
–
–
–
-6
t
DQSQ
Max
0.55
0.55
0.45
1.25
5.5
6.5
5.5
6.5
0.6
0.6
5.5
6.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Electrical Specifications
t
Min
0.45
0.45
0.75
t
©2007 Micron Technology, Inc. All rights reserved
2.0
2.0
7.5
0.8
0.9
0.8
0.9
1.8
2.0
2.0
0.4
0.4
0.2
0.2
QH -
t
1.0
1.3
1.5
CH,
12
CL
1
–
–
–
–
-75
t
DQSQ
Max
0.55
0.55
1.25
6.0
6.5
6.0
6.5
0.6
0.6
0.6
6.0
6.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Unit Notes
t
t
t
t
t
t
t
t
ns
ns
CK
CK
CK
ns
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
CK
CK
ns
ns
ns
ns
ns
ns
ns
–
12, 13,
12, 13,
12, 16
18, 19
14, 20
10
11
14
14
15
16
17
18