mt46h32m32lfcm-6 Micron Semiconductor Products, mt46h32m32lfcm-6 Datasheet - Page 54

• Manufacturer Part Number: mt46h32m32lfcm-6
• Description: 1gb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 23:
PDF: 09005aef82ce3074/Source: 09005aef82cd0158
ddr_mobile_sdram_cmd_op_timing_dia_fr5.08__3.fm - Rev. G 07/08 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Nonconsecutive READ Bursts
Notes:
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4, 8, or 16 (if burst is 8 or 16, the second burst interrupts the first).
3. Shown with nominal
4. Example applies when READ commands are issued to different devices or nonconsecutive
READs.
OUT
CL = 2
n (or b) = data-out from column n (or column b).
NOP
NOP
T1
T1
CL = 3
T1n
T1n
D
n
OUT
NOP
NOP
T2
1
T2
t
AC,
t
D
n + 1
DQSCK, and
OUT
T2n
T2n
54
D
D
n + 2
READ
Bank,
READ
Bank,
OUT
Col b
Col b
OUT
n
T3
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
D
n + 1
D
n + 3
T3n
T3n
OUT
OUT
1Gb: x16, x32 Mobile DDR SDRAM
CL = 2
D
n + 2
T4
T4
NOP
NOP
OUT
Don’t Care
CL = 3
D
n + 3
T4n
T4n
OUT
T5
T5
NOP
NOP
©2007 Micron Technology, Inc. All rights reserved
D
OUT
b
Transitioning Data
Timing Diagrams
T5n
T5n
D
b + 1
OUT
T6
T6
NOP
NOP
D
D
b + 2
OUT
OUT
b