mt47h128m16hg-3-it Micron Semiconductor Products, mt47h128m16hg-3-it Datasheet - Page 24

• Manufacturer Part Number: mt47h128m16hg-3-it
• Description: 2gb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Figure 10:
Extended Mode Register (EMR)
PDF: 09005aef824f87b6/Source: 09005aef824f1182
2gb_ddr2.fm - Rev. A 9/06 EN
COMMAND
COMMAND
DQS, DQS#
DQS, DQS#
CK#
CK#
DQ
DQ
CK
CK
CAS Latency (CL)
READ
READ
T0
T0
Notes:
1. BL = 4.
2. Posted CAS# additive latency (AL) = 0.
3. Shown with nominal
The extended mode register controls functions beyond those controlled by the mode
register; these additional functions are DLL enable/disable, output drive strength, on-
die termination (ODT) (R
DQS# enable/disable, RDQS/RDQS# enable/disable, and output disable/enable. These
functions are controlled via the bits shown in Figure 11 on page 25. The EMR is
programmed via the LM command and will retain the stored information until it is
programmed again or the device loses power. Reprogramming the EMR will not alter the
contents of the memory array, provided it is performed correctly.
The EMR must be loaded when all banks are idle and no bursts are in progress, and the
controller must wait the specified time
tion. Violating either of these requirements could result in unspecified operation.
NOP
NOP
T1
T1
CL = 3 (AL = 0)
CL = 4 (AL = 0)
NOP
NOP
T2
T2
t
AC,
TT
t
), posted AL, off-chip driver impedance calibration (OCD),
DQSCK, and
24
NOP
NOP
T3
T3
D
OUT
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
MRD before initiating any subsequent opera-
DQSQ.
D
n + 1
OUT
2Gb: x4, x8, x16 DDR2 SDRAM
Extended Mode Register (EMR)
NOP
NOP
T4
T4
D
D
n + 2
OUT
OUT
n
TRANSITIONING DATA
D
n + 1
D
n + 3
OUT
OUT
NOP
NOP
©2006 Micron Technology, Inc. All rights reserved.
T5
T5
D
n + 2
OUT
D
n + 3
OUT
DON’T CARE
NOP
NOP
T6
T6