cy62138fv30 Cypress Semiconductor Corporation., cy62138fv30 Datasheet - Page 4

• Manufacturer Part Number: cy62138fv30
• Description: 2-mbit 256k X 8 Static Ram
• Manufacturer: Cypress Semiconductor Corporation.

Thermal Resistance
AC Test Loads and Waveforms
Data Retention Characteristics
Data Retention Waveform
Notes:
Document #: 001-08029 Rev. *E
9. Full device AC operation requires linear V
10. CE is the logical combination of CE
V
I
t
t
Parameter
Parameter
CCDR
CDR
R
DR
[9]
Θ
Θ
[8]
JA
JC
OUTPUT
[7]
Parameters
V
INCLUDING
CE
CC
V
JIG AND
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
CC
R
V
SCOPE
R1
R2
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
TH
TH
CC
Description
30 pF
for Data Retention
R1
[8]
Description
1
and CE
[10]
R2
CC
Still air, soldered on a 3 x 4.5
inch, two layer printed circuit
board
Equivalent to:
2.5V (2.2V to 2.7V)
2
ramp from V
. When CE
V
(Over the Operating Range)
CC(min)
t
CDR
Test Conditions
16667
15385
8000
1.20
OUTPUT
1
DR
is LOW and CE
to V
Rise Time = 1 V/ns
CC(min)
V
CE
V
THEVENIN
CC
IN
1
> V
DATA RETENTION MODE
> 100 µs or stable at V
= 1.5V,
> V
GND
2
V
is HIGH, CE is LOW; when CE
CC
CC
CC
− 0.2V or V
− 0.2V or CE
V
EQUIVALENT
R
Conditions
DR
TH
44.53
24.05
3.0V (2.7V to 3.6V)
SOIC
10%
> 1.5V
ALL INPUT PULSES
1103
1554
CC(min)
1.75
IN
V
645
VFBGA
2
< 0.2V
90%
38.49
17.66
< 0.2V,
> 100 µs.
1
is HIGH or CE
CY62138FV30 MoBL
TSOP II
44.16
11.97
V
Min
t
1.5
CC(min)
RC
0
90%
t
R
2
10%
is LOW, CE is HIGH.
STSOP
Fall Time = 1 V/ns
59.72
15.38
Typ
1
[3]
Unit
Ω
Ω
Ω
V
TSOP I
50.19
14.59
Max
Page 4 of 13
4
°C/W
°C/W
Unit
Unit
µA
ns
ns
V
®
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