w9425g6eb Winbond Electronics Corp America, w9425g6eb Datasheet - Page 4

• Manufacturer Part Number: w9425g6eb
• Description: 4 M ? 4 Banks ? 16 Bits Ddr Sdram
• Manufacturer: Winbond Electronics Corp America

1. GENERAL DESCRIPTION
W9425G6EB is a CMOS Double Data Rate synchronous dynamic random access memory (DDR
SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. W9425G6EB delivers a data bandwidth
of up to 400M words per second (-5). To fully comply with the personal computer industrial standard,
W9425G6EB is sorted into two speed grades: -5 and -6I. The -5 is compliant to the DDR400/CL3
specification. The -6I is compliant to the DDR333/CL3 specification (the -6I grade which is guaranteed
to support -40°C ~ 85°C).
All Input reference to the positive edge of CLK (except for DQ, DM and CKE). The timing reference
point for the differential clock is when the CLK and CLK signals cross during a transition. Write and
Read data are synchronized with the both edges of DQS (Data Strobe).
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9425G6EB is ideal for main memory in
high performance applications.
2. FEATURES
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2.5V ±0.2V Power Supply
Up to 200 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and CLK )
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5 and 3
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
7.8µS refresh interval (8K/ 64 mS refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2
Packaged in TFBGA 60 Ball (8X13 mm
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), using Lead free materials with RoHS compliant
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Publication Release Date:Feb. 12, 2009
W9425G6EB
Revision A02